Study of Self-Induced Growth of AlGaAs Nanoneedles on Silicon Substrates Using Metal Organic Chemical Vapor Deposition Technique

2016 ◽  
Vol 16 (1) ◽  
pp. 973-980
Author(s):  
R. K. Bag ◽  
S. Singh ◽  
R. Tyagi ◽  
D. K. Pandya ◽  
R. Singh
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Deposition Technique ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Study of In2O3 Thin Films Prepared on TiN Substrates Using a Triethylindium and Oxygen Mixture

2007 ◽  
Vol 336-338 ◽  
pp. 760-762
Author(s):  
Hyoun Woo Kim ◽  
Ju Hyun Myung
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxygen Mixture ◽  
Organic Chemical ◽  
Deposition Technique ◽  
Vapor Deposition Technique ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Sem Analyses

Indium oxide (In2O3) films was deposited on TiN substrates by the metal organic chemical vapor deposition technique using a triethylindium and oxygen mixture. The films deposited at 250-350°C were polycrystalline, while that deposited at 200°C was close to amorphous. XRD and SEM analyses indicated that the films grown at 350°C had grained structures with the (222) preferred orientation.

scholarly journals Grain size reduction on nanostructured TiO2 thin films due to annealing

RSC Advances ◽  
2017 ◽  
Vol 7 (48) ◽  
pp. 30295-30302 ◽  
Author(s):  
Zaki S. Khalifa
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Deposition Technique ◽  
Tio2 Thin Films ◽  
Vapor Deposition Technique ◽  
Metal Organic ◽  
Quartz Substrates ◽  
Organic Chemical Vapor Deposition

TiO2 thin films have been deposited at 300 °C on quartz substrates by a metal–organic chemical vapor deposition technique.

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