Influence of free-standing GaN substrate on ultraviolet light-emitting-diodes by atmospheric-pressure metal-organic chemical vapor deposition

2013 ◽  
Author(s):  
C. Y. Shieh ◽  
Z. Y. Li ◽  
C. H. Chiu ◽  
P. M. Tu ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Free Standing ◽  
Light Emitting ◽  
Metal Organic ◽  
Ultraviolet Light Emitting Diodes ◽  
Organic Chemical Vapor Deposition

Metal organic chemical vapor deposition of crack-free GaN-based light emitting diodes on Si (111) using a thin Al2O3 interlayer

2009 ◽  
Vol 94 (22) ◽  
pp. 222105 ◽  
Author(s):  
William E. Fenwick ◽  
Andrew Melton ◽  
Tianming Xu ◽  
Nola Li ◽  
Christopher Summers ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Pl Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

Sign in / Sign up

Export Citation Format

Share Document