Field enhancement with plasmonic nano-antennas on silicon-based waveguides

Author(s):  
M. Darvishzadeh-Varcheie ◽  
C. Guclu ◽  
R. Ragan ◽  
O. Boyraz ◽  
F. Capolino
2013 ◽  
Vol 88 (19) ◽  
Author(s):  
Ibraheem Al-Naib ◽  
Gargi Sharma ◽  
Marc M. Dignam ◽  
Hassan Hafez ◽  
Akram Ibrahim ◽  
...  

2018 ◽  
Vol 26 (10) ◽  
pp. 12344 ◽  
Author(s):  
Mingcheng Panmai ◽  
Jin Xiang ◽  
Zhibo Sun ◽  
Yuanyuan Peng ◽  
Hongfeng Liu ◽  
...  
Keyword(s):  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Monir Morshed ◽  
Ziyuan Li ◽  
Benjamin C. Olbricht ◽  
Lan Fu ◽  
Ahasanul Haque ◽  
...  

Abstract Nano-antennas are replicas of antennas that operate at radio-frequencies, but with considerably smaller dimensions when compared with their radio frequency counterparts. Noble metals based nano-antennas have the ability to enhance photoinduced phenomena such as localized electric fields, therefore-they have been used in various applications ranging from optical sensing and imaging to performance improvement of solar cells. However, such nano-structures can be damaged in high power applications such as heat resisted magnetic recording, solar thermo-photovoltaics and nano-scale heat transfer systems. Having a small footprint, nano-antennas cannot handle high fluences (energy density per unit area) and are subject to being damaged at adequately high power (some antennas can handle just a few milliwatts). In addition, given that nano-antennas are passive devices driven by external light sources, the potential damage of the antennas limits their use with high power lasers: this liability can be overcome by employing materials with high melting points such as chromium (Cr) and tungsten (W). In this article, we fabricate chromium and tungsten nano-antennas and demonstrate that they can handle 110 and 300 times higher fluence than that of gold (Au) counterpart, while the electric field enhancement is not significantly reduced.


1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.


2003 ◽  
Vol 771 ◽  
Author(s):  
M. Kemerink ◽  
S.F. Alvarado ◽  
P.M. Koenraad ◽  
R.A.J. Janssen ◽  
H.W.M. Salemink ◽  
...  

AbstractScanning-tunneling spectroscopy experiments have been performed on conjugated polymer films and have been compared to a three-dimensional numerical model for charge injection and transport. It is found that field enhancement near the tip apex leads to significant changes in the injected current, which can amount to more than an order of magnitude, and can even change the polarity of the dominant charge carrier. As a direct consequence, the single-particle band gap and band alignment of the organic material can be directly obtained from tip height-voltage (z-V) curves, provided that the tip has a sufficiently sharp apex.


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