High field transport in phosphor materials is an essential element of thin film
electroluminescent device performance. Due to the high accelerating fields in these
structures (1–3 MV/cm), a complete description of transport under high field
conditions utilizing information on the full band structure of the material is critical
to understand the light emission process due to impact excitation of luminescent
impurities. Here we investigate the role of band structure for ZnS, GaN, and SrS based
on empirical pseudopotential calculations to study its effect on the high field energy
distribution of conduction band electrons.