1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)
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Simulation analysis of impurity profile extraction by SCM

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742762 ◽

2002 ◽

Author(s):

K. Matsuzawa ◽

Y. Oowaki ◽

M. Nakamura ◽

N. Aoki ◽

I. Mizushima

Keyword(s):

Simulation Analysis ◽

Impurity Profile

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Two-dimensional simulation of negative resistance effects using quantum moment equations

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742733 ◽

2002 ◽

Author(s):

F. Vazquez ◽

M. Ogura ◽

A. Strachan ◽

R. Cottle

Keyword(s):

Negative Resistance ◽

Two Dimensional ◽

Moment Equations ◽

Dimensional Simulation

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Single-electron tunneling through an asymmetrical tunnel barrier

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742730 ◽

2002 ◽

Author(s):

S. Amakawa ◽

M. Fujishima ◽

K. Hoh

Keyword(s):

Electron Tunneling ◽

Single Electron ◽

Tunnel Barrier ◽

Single Electron Tunneling

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Monte Carlo investigation of optimal device architectures for SiGe FETs

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742749 ◽

2002 ◽

Author(s):

S. Roy ◽

S. Kaya ◽

S. Babiker ◽

A. Asenov ◽

J.R. Barker

Keyword(s):

Monte Carlo ◽

Monte Carlo Investigation

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Enhancement of weak impact ionization in InAlAs/InGaAs HEMTs induced by surface traps: simulation and experiments

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742758 ◽

2002 ◽

Author(s):

T. Suemitsu ◽

M. Tomizawa ◽

T. Enoki ◽

Y. Ishii

Keyword(s):

Impact Ionization

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Effect of ionized impurity on the sequential tunneling transfer of an electron through a quantum disk

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742701 ◽

2002 ◽

Author(s):

M. Ishida ◽

M. Yamaguchi ◽

N. Sawaki

Keyword(s):

Quantum Disk ◽

Tunneling Transfer

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Transport analysis of filamentary dielectric breakdown model for metal-oxide-semiconductor tunnel structures

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742759 ◽

2002 ◽

Author(s):

D.Z.-Y. Ting ◽

T.C. McGill

Keyword(s):

Metal Oxide ◽

Dielectric Breakdown ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transport Analysis ◽

Breakdown Model ◽

Dielectric Breakdown Model

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Enhanced hole drift velocity in sub-0.1 μm Si devices caused by anisotropic velocity overshoot

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742748 ◽

2002 ◽

Author(s):

Y. Tagawa ◽

Y. Awano

Keyword(s):

Drift Velocity ◽

Velocity Overshoot

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Strain engineered In/sub x/Ga/sub 1-x/As channel pHEMTs on virtual substrates: a simulation study

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742741 ◽

2002 ◽

Author(s):

S. Babiker ◽

A. Asenov ◽

S. Roy ◽

J.R. Barker ◽

S.P. Beaumont

Keyword(s):

Simulation Study

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3D pseudospectral self-consistent field approximation

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) ◽

10.1109/iwce.1998.742705 ◽

2002 ◽

Author(s):

T. Kerkhoven ◽

W. Chow ◽

F. Bodine

Keyword(s):

Field Approximation ◽

Consistent Field ◽

Self Consistent ◽

Self Consistent Field

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1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Simulation analysis of impurity profile extraction by SCM

Two-dimensional simulation of negative resistance effects using quantum moment equations

Single-electron tunneling through an asymmetrical tunnel barrier

Monte Carlo investigation of optimal device architectures for SiGe FETs

Enhancement of weak impact ionization in InAlAs/InGaAs HEMTs induced by surface traps: simulation and experiments

Effect of ionized impurity on the sequential tunneling transfer of an electron through a quantum disk

Transport analysis of filamentary dielectric breakdown model for metal-oxide-semiconductor tunnel structures

Enhanced hole drift velocity in sub-0.1 μm Si devices caused by anisotropic velocity overshoot

Strain engineered In/sub x/Ga/sub 1-x/As channel pHEMTs on virtual substrates: a simulation study

3D pseudospectral self-consistent field approximation

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)
Latest Publications