Influences of thicknesses and structures of barrier cap layers on As ion profiles and implant damages in HgCdTe epilayers

2016 ◽  
Author(s):  
Changzhi Shi ◽  
Chun Lin ◽  
Yanfeng Wei ◽  
Lu Chen ◽  
Zhenhua Ye
Keyword(s):  
Hgcdte Epilayers ◽  
Ion Profiles

Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma

2006 ◽  
Vol 35 (6) ◽  
pp. 1465-1469 ◽  
Author(s):  
T. D. Golding ◽  
R. Hellmer ◽  
L. Bubulac ◽  
J. H. Dinan ◽  
L. Wang ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Discharge Plasma ◽  
Glow Discharge Plasma ◽  
Si Substrates ◽  
Hgcdte Epilayers

scholarly journals Simulation of triacylglycerol ion profiles: bioinformatics for interpretation of triacylglycerol biosynthesis

2013 ◽  
Vol 54 (4) ◽  
pp. 1023-1032 ◽  
Author(s):  
Rowland H. Han ◽  
Miao Wang ◽  
Xiaoling Fang ◽  
Xianlin Han
Keyword(s):  
Triacylglycerol Biosynthesis ◽  
Ion Profiles

Determining Specific Food Volatiles Contributing to PTR-MS Ion Profiles Using GC-EI-MS

2008 ◽  
Vol 56 (13) ◽  
pp. 5278-5284 ◽  
Author(s):  
María-Ángeles Pozo-Bayón ◽  
Jean-Paul Schirlé-Keller ◽  
Gary A. Reineccius
Keyword(s):  
Ion Profiles ◽  
Specific Food

Ion implantation of Carbon and Silicon into Ge2Sb2Te5: Ion Profiles and Post Crystallization Redistribution

2011 ◽  
Vol 1338 ◽  
Author(s):  
Guy M. Cohen ◽  
Simone Raoux ◽  
Marinus Hopstaken ◽  
Siegfried Maurer
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Carbon Doping ◽  
Recrystallization Annealing ◽  
Silicon Doping ◽  
Ion Energy ◽  
Ion Profiles ◽  
Dopant Redistribution ◽  
Doping Profiles ◽  
Secondary Ion

ABSTRACTIon implantation of Ge2Sb2Te5 (GST) enables localized doping of the film by using conventional lithography. Although the doped region dimensions and the doping concentration profile are defined by the opening in the mask and the ion energy, longitudinal and lateral straggling of implanted ions leads to a spread in the ions final location. Additionally, a thermal treatment such as one that induces a phase transition may lead to redistribution of the implanted dopants and further increase the spread. In this work we demonstrate doping of GST by ion implantation. Using Secondary Ion Mass Spectrometry (SIMS) we studied the as-implanted doping profiles obtain by ion implantation of carbon and silicon into GST. We also investigated by SIMS the dopant redistribution following a recrystallization annealing. The as-implanted ion profiles were found to be in fair agreement with TRIM simulation. The dopants profiles show little change after a crystallization annealing at 200°C for silicon doping and at 350°C for carbon doping.

High quality HgCdTe epilayers grown on (211)B GaAs by molecular beam epitaxy

1995 ◽  
Vol 152 (4) ◽  
pp. 261-265 ◽  
Author(s):  
S.D. Chen ◽  
L. Lin ◽  
X.Z. He ◽  
M.J. Ying ◽  
R.Q. Wu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality ◽  
Hgcdte Epilayers

Characterizing Ion Profiles in Dynamic Junction Light-Emitting Electrochemical Cells

2013 ◽  
Vol 5 (22) ◽  
pp. 11509-11514 ◽  
Author(s):  
Tyko D. Shoji ◽  
Zihua Zhu ◽  
Janelle M. Leger
Keyword(s):  
Electrochemical Cells ◽  
Light Emitting ◽  
Ion Profiles

Photoluminescence studies of HgCdTe epilayers

2010 ◽  
Vol 7 (6) ◽  
pp. 1615-1617
Author(s):  
I. C. Robin ◽  
M. Taupin ◽  
R. Derone ◽  
A. Solignac ◽  
P. Ballet ◽  
...  
Keyword(s):  
Photoluminescence Studies ◽  
Hgcdte Epilayers
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