scholarly journals A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD

Author(s):  
D. Wood ◽  
D. Hall ◽  
J. P. D. Gow ◽  
A. Holland
Keyword(s):  
2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S.G. Gasan-Zade ◽  
M.V. Strikha ◽  
G.A. Shepelskii

AbstractThe intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.


1985 ◽  
Vol 58 (11) ◽  
pp. 4207-4215 ◽  
Author(s):  
B. Clerjaud ◽  
C. Naud ◽  
B. Deveaud ◽  
B. Lambert ◽  
B. Plot ◽  
...  
Keyword(s):  

1996 ◽  
Vol 442 ◽  
Author(s):  
V. Alex ◽  
T. Iino

AbstractNear band gap luminescence in bulk-grown semi-insulating GaAs is excited in a two step process via the EL2 defect. While the conventionally excited photoluminescence of our samples is dominated by conduction band to acceptor transitions, the upconversion process selectively excites donor acceptor pair transitions. Illumination near the maximum of the EL2- photoquenching band at 1064 nm leads to a complete disappearance of the so called upconversion photoluminescence (UPL). Excitation with light of shorter wavelengths however only partially quenches the UPL. Excitation between 850nm and 900nm completely regenerates the UPL. The characteristic photorecovery transients of the UPL are described by the EL2 regeneration mechanism via the population of the acceptor level of the metastable EL2 by hot electrons. The recovery of the EL2 by simultaneous illumination with above and below band gap light enables the observation of UPL at wavelengths, where the EL2-defect would otherwise be rapidly quenched. Under these conditions we observe a remarkable increase of the UPL-efficiency.


2009 ◽  
Vol 80 (3) ◽  
Author(s):  
R. Jones ◽  
J. P. Goss ◽  
P. R. Briddon

2012 ◽  
Vol 717-720 ◽  
pp. 1195-1198
Author(s):  
Geunsik Lim ◽  
Tariq Manzur ◽  
Aravinda Kar

An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into an n-type crystalline 6H-SiC substrate by a laser doping technique for sensing CO2, CO, NO2 and NO gases, respectively. Each dopant creates an acceptor energy level within the bandgap of the substrate so that the energy gap between this acceptor level and the valence band matches the quantum of energy emitted by the gas of interest. The photons of the gas excite electrons from the valence band to the acceptor level, which alters the electron density in these two states. Consequently, the refractive index of the substrate changes, which, in turn, modifies the reflectivity of the substrate. This change in reflectivity represents the optical signal of the sensor, which is probed remotely with a laser such as a helium-neon laser. Although the midwave infrared (3-5 mm) band is studied in this paper, the approach is applicable to other spectral bands.


2007 ◽  
Vol 91 (1) ◽  
pp. 012101 ◽  
Author(s):  
N. Khan ◽  
N. Nepal ◽  
A. Sedhain ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  

1988 ◽  
Vol 64 (3) ◽  
pp. 1564-1567 ◽  
Author(s):  
L. Montelius ◽  
S. Nilsson ◽  
L. Samuelson ◽  
E. Janzén ◽  
M. Ahlström
Keyword(s):  

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