Novel short-pulse laser diode source for high-resolution 3D flash LIDAR

2017 ◽  
Author(s):  
Celine Canal ◽  
Arnaud Laugustin ◽  
Andreas Kohl ◽  
Olivier Rabot
2005 ◽  
Author(s):  
M. Kume ◽  
H. Naito ◽  
J. Ohya ◽  
I. Ohta ◽  
H. Shimizu ◽  
...  

Author(s):  
Andreas Kohl ◽  
Celine Canal ◽  
Arnaud Laugustin ◽  
Olivier Rabot

2008 ◽  
Vol 79 (10) ◽  
pp. 10E905 ◽  
Author(s):  
J. Workman ◽  
J. Cobble ◽  
K. Flippo ◽  
D. C. Gautier ◽  
S. Letzring

1991 ◽  
Vol 34 (12) ◽  
pp. 1329-1333 ◽  
Author(s):  
Masahiro Kume ◽  
Hiroki Naito ◽  
Jun Ohya ◽  
Issey Ohta ◽  
Hirokazu Shimizu ◽  
...  

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


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