Second order nonlinearities in silicon waveguides: from the physics to new applications (Conference Presentation)

Author(s):  
Chiara Vecchi ◽  
Claudio Castellan ◽  
Pierre Guilleme ◽  
Alessandro Trenti ◽  
Martino Bernard ◽  
...  
2017 ◽  
Vol 11 (3) ◽  
pp. 200-206 ◽  
Author(s):  
E. Timurdogan ◽  
C. V. Poulton ◽  
M. J. Byrd ◽  
M. R. Watts

2014 ◽  
Vol 39 (6) ◽  
pp. 1693 ◽  
Author(s):  
Matthew W. Puckett ◽  
Joseph S. T. Smalley ◽  
Maxim Abashin ◽  
Andrew Grieco ◽  
Yeshaiahu Fainman

2014 ◽  
Vol 3 (1) ◽  
pp. 129-136 ◽  
Author(s):  
Clemens Schriever ◽  
Federica Bianco ◽  
Massimo Cazzanelli ◽  
Mher Ghulinyan ◽  
Christian Eisenschmidt ◽  
...  

2010 ◽  
Vol 18 (17) ◽  
pp. 17631 ◽  
Author(s):  
Vivek Raghunathan ◽  
Winnie N. Ye ◽  
Juejun Hu ◽  
Tomoyuki Izuhara ◽  
Jurgen Michel ◽  
...  

Author(s):  
W. L. Bell

Disappearance voltages for second order reflections can be determined experimentally in a variety of ways. The more subjective methods, such as Kikuchi line disappearance and bend contour imaging, involve comparing a series of diffraction patterns or micrographs taken at intervals throughout the disappearance range and selecting that voltage which gives the strongest disappearance effect. The estimated accuracies of these methods are both to within 10 kV, or about 2-4%, of the true disappearance voltage, which is quite sufficient for using these voltages in further calculations. However, it is the necessity of determining this information by comparisons of exposed plates rather than while operating the microscope that detracts from the immediate usefulness of these methods if there is reason to perform experiments at an unknown disappearance voltage.The convergent beam technique for determining the disappearance voltage has been found to be a highly objective method when it is applicable, i.e. when reasonable crystal perfection exists and an area of uniform thickness can be found. The criterion for determining this voltage is that the central maximum disappear from the rocking curve for the second order spot.


Author(s):  
T. Imura ◽  
S. Maruse ◽  
K. Mihama ◽  
M. Iseki ◽  
M. Hibino ◽  
...  

Ultra high voltage STEM has many inherent technical advantages over CTEM. These advantages include better signal detectability and signal processing capability. It is hoped that it will explore some new applications which were previously not possible. Conventional STEM (including CTEM with STEM attachment), however, has been unable to provide these inherent advantages due to insufficient performance and engineering problems. Recently we have developed a new 1250 kV STEM and completed installation at Nagoya University in Japan. It has been designed to break through conventional engineering limitations and bring about theoretical advantage in practical applications.In the design of this instrument, we exercised maximum care in providing a stable electron probe. A high voltage generator and an accelerator are housed in two separate pressure vessels and they are connected with a high voltage resistor cable.(Fig. 1) This design minimized induction generated from the high voltage generator, which is a high frequency Cockcroft-Walton type, being transmitted to the electron probe.


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