Visible plasmonic perfect absorber based on titanium nitride metamaterial

Author(s):  
Tomoki Watanabe ◽  
Meng-Ju Yu ◽  
Hao-Yu Lan ◽  
Masanobu Haraguchi ◽  
Yu-Jung Lu
Plasmonics ◽  
2015 ◽  
Vol 10 (6) ◽  
pp. 1473-1478 ◽  
Author(s):  
Jianguo Wang ◽  
Weili Zhang ◽  
Meiping Zhu ◽  
Kui Yi ◽  
Jianda Shao

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1092
Author(s):  
Dewang Huo ◽  
Xinyan Ma ◽  
Hang Su ◽  
Chao Wang ◽  
Hua Zhao

In this paper, a thin metasurface perfect absorber based on refractory titanium nitride (TiN) is proposed. The size parameter of the metasurface is investigated based on the finite difference time domain method and transfer matrix method. With only a 15-nm-thick TiN layer inside the silica/TiN/silica stacks standing on the TiN substrate, the near-perfect absorption throughout the visible regime is realized. The cross-talk between the upper and lower dielectric layers enables the broadening of the absorption peak. After patterning the thin film into a nanodisk array, the resonances from the nanodisk array emerge to broaden the high absorption bandwidth. As a result, the proposed metasurface achieves perfect absorption in the waveband from 400 to 2000 nm with an average absorption of 95% and polarization-insensitivity under the normal incidence. The proposed metasurface maintains average absorbance of 90% up to 50-degree oblique incidence for unpolarized light. Our work shows promising potential in the application of solar energy harvesting and other applications requiring refractory metasurfaces.


2018 ◽  
Vol 32 (01) ◽  
pp. 1750365 ◽  
Author(s):  
Qiuqun Liang ◽  
Yongqi Fu ◽  
Xiongping Xia ◽  
Liu Wang ◽  
Rummei Gao

An ultrathin metasurface-based absorber consisting of titanium nitride (TiN) nano-disk arrays–dielectric layer-TiN substrate is proposed in this paper. The absorber exhibits near-unity absorption in the whole visible range of 380–780 nm. Our results demonstrate that the proposed metasurface-based absorber is not only independent of light polarization, but also exhibits angle-independent absorption behavior for oblique incidence up to 70[Formula: see text]. The high absorption performance of the TiN nano-disk arrays-based absorber can attribute to two different loss mechanisms associated with the intrinsic loss and plasmonic resonance.


2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Dasol Lee ◽  
Myeongcheol Go ◽  
Minkyung Kim ◽  
Junho Jang ◽  
Chungryong Choi ◽  
...  

AbstractBroadband perfect absorbers have been intensively researched for decades because of their near-perfect absorption optical property that can be applied to diverse applications. Unfortunately, achieving large-scale and heat-tolerant absorbers has been remained challenging work because of costly and time-consuming lithography methods and thermolability of materials, respectively. Here, we demonstrate a thermally robust titanium nitride broadband absorber with >95% absorption efficiency in the visible and near-infrared region (400–900 nm). A relatively large-scale (2.5 cm × 2.5 cm) absorber device is fabricated by using a fabrication technique of multiple-patterning colloidal lithography. The optical properties of the absorber are still maintained even after heating at the temperatures >600 ∘C. Such a large-scale, heat-tolerant, and broadband near-perfect absorber will provide further useful applications in solar thermophotovoltaics, stealth, and absorption controlling in high-temperature conditions.


2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Dewang Huo ◽  
Jingwen Zhang ◽  
Hao Wang ◽  
Xiaoxuan Ren ◽  
Chao Wang ◽  
...  

Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.


1989 ◽  
Vol 50 (C7) ◽  
pp. C7-169-C7-173
Author(s):  
R.C BUSCHERT ◽  
P. N. GIBSON ◽  
W. GISSLER ◽  
J. HAUPT ◽  
T. A. CRABB
Keyword(s):  

1980 ◽  
Vol 41 (5) ◽  
pp. 558-566
Author(s):  
O. Yu Elagina ◽  
◽  
D.O. Kolbas ◽  
A.G. Buklakov ◽  
N. Derr ◽  
...  

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