Deep-UV light detection has important application in surveillance and homeland security regions. CH
3
NH
3
PbX
3
(X = Cl, Br, I) materials have outstanding optical absorption and electronic transport properties suitable for obtaining excellent deep-UV photoresponse. In this work, we have grown high-quality CH
3
NH
3
PbX
3
(X = Cl, Br, I) bulk crystals and used them to fabricate photodetectors. We found that they all have high-sensitive and fast-speed response to 255 nm deep-UV light. Their responsivities are 10–10
3
times higher than MgZnO and Ga
2
O
3
detectors, and their response speeds are 10
3
times faster than Ga
2
O
3
and ZnO detectors. These results indicate a new promising route for deep-UV detection.