Transport features of photogenerated and equilibrium charge carriers in thin PPV polymer layers

Author(s):  
Gytas Juska
2004 ◽  
Vol 241 (1) ◽  
pp. 13-19 ◽  
Author(s):  
O. Bleibaum ◽  
E. Haba ◽  
H. Böttger ◽  
V. V. Bryksin

2017 ◽  
Vol 107 ◽  
pp. 228-233 ◽  
Author(s):  
A.N. Sofronov ◽  
L.E. Vorobjev ◽  
D.A. Firsov ◽  
R.M. Balagula ◽  
A.A. Tonkikh

2001 ◽  
Vol 692 ◽  
Author(s):  
G. Khlyap

AbstractThe paper deals with the problem of luminescence due to non-equilibrium charge carriers transfer between the quasi-2D electron system localized in the space-charge region of the heterostructures based on lead sulfide films (up to 3 μm thickness) and zinc selenide substrates surrounded by the wide gap semiconductor region. The processes of electro- and photoluminescence are studied, the band diagram is proposed and the main parameters of the structure PbS/quasi-2DEG/ZnSe are calculated.


2017 ◽  
Vol 736 ◽  
pp. 101-104
Author(s):  
A.P. Rodzevich ◽  
L.V. Kuzmina ◽  
E.G. Gazenauer ◽  
V.I. Krasheninin ◽  
D.Yu. Sozinov ◽  
...  

The experiments have emphasized that additionally introduced impurities of Fe and Pb ions are relevant to the initiation of slow and explosive decomposition of silver azide crystals by the external electric field and UV irradiation. External gas release was used for research purpose. Test-sensitivity is 10−12 mole. Time-to-explosion was measured by a stop watch. It’s been found out that the reaction of slow decomposition in silver azide under the action of electric field turns into explosion faster in samples with the additionally introduced impurities. The samples with additionally introduced Fe are the most explosive ones (time-to-explosion 3 minutes). The authors have assumed that external influence can generate non-equilibrium charge carriers (holes), which become localized on cationic vacancies and support formation of reactive sites. As soon as cut off concentration of these sites is reached, the solid-phase chain reaction turns into explosion. The growing concentration of impurity influences on the number of reactive sites, making their concentration critical. In view of the results obtained in experiments a procedure for monitoring the decomposition of crystals is suggested, which necessitates additional introduction of Fe and Pb ions.


2015 ◽  
Vol 821-823 ◽  
pp. 632-635 ◽  
Author(s):  
Alexey V. Afanasyev ◽  
Boris V. Ivanov ◽  
Vladimir A. Ilyin ◽  
Alexey F. Kardo-Sysoev ◽  
Victor V. Luchinin ◽  
...  

In this paper we report on the effect of temperature and injection level on the effective lifetime of non-equilibrium charge carriers in p-base of 4H-SiC PiN diodes. Studies were carried out on 1kV drift step recovery diodes (DSRDs) with p+-p--n+. The lifetime of non-equilibrium charge carriers in 4H-SiC p+-p--n+ structures increases by an average of 6 times from 250ns to 1.4μs with the increase of the samples temperature from 300K to 673K. However, increase of the injection level in the drift region from 2.3·1016cm-3 to 5.9·1016cm-3 does not affect the lifetime indicating that Shockley-Read-Hall recombination processes are dominating.


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