Atomic scale structure-property relationships of defects and interfaces in novel oxide thin films

2002 ◽  
Author(s):  
Susanne Stemmer
Keyword(s):  
Thin Films ◽  
Scale Structure ◽  
Atomic Scale ◽  
Structure Property ◽  
Oxide Thin Films ◽  
Structure Property Relationships ◽  
Atomic Scale Structure

scholarly journals Atomic Scale Structure of (Ag,Cu)2ZnSnSe4 and Cu2Zn(Sn,Ge)Se4 Kesterite Thin Films

2021 ◽  
Vol 9 ◽  
Author(s):  
Konrad Ritter ◽  
Galina Gurieva ◽  
Stefanie Eckner ◽  
Cora Preiß ◽  
Maurizio Ritzer ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grazing Incidence ◽  
Scale Structure ◽  
Atomic Scale ◽  
Crystallographic Structure ◽  
X Ray ◽  
Bond Lengths ◽  
Preferential Formation ◽  
Atomic Scale Structure

Kesterite based materials are being researched and developed as affordable, efficient, and mechanically flexible absorber materials for thin film photovoltaics. Both (Ag,Cu)2ZnSnSe4 and Cu2Zn(Sn,Ge)Se4 based devices have shown great potential in overcoming some of the remaining challenges for further increasing the conversion efficiency of kesterite based solar cells. This study therefore investigates the long range crystallographic structure and the local atomic scale structure of technologically relevant thin films by means of grazing incidence X-ray diffraction and low temperature X-ray absorption spectroscopy. As expected, the unit cell dimensions change about an order of magnitude more than the element specific average bond lengths. In case of Cu2Zn(Sn,Ge)Se4, the thin film absorbers show a very similar behavior as Cu2Zn(Sn,Ge)Se4 powder samples previously studied. Small amounts of residual S in the thin films were taken into account in the analysis and the results imply a preferential formation of Sn-S bonds instead of Ge-S bonds. In (Ag,Cu)2ZnSnSe4, the dependence of the Ag-Se and Cu-Se bond lengths on Ag/(Ag+Cu) might indicate an energetic advantage in the formation of certain local configurations.

Atomic-scale structure and formation of antiphase boundaries in α-Li0.5Fe2.5O4 thin films on MgAl2O4(001) substrates

2017 ◽  
Vol 127 ◽  
pp. 178-184 ◽  
Author(s):  
Shao-Bo Mi ◽  
Ru-Yi Zhang ◽  
Lu Lu ◽  
Ming Liu ◽  
Hong Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Scale Structure ◽  
Atomic Scale ◽  
Antiphase Boundaries ◽  
Atomic Scale Structure

scholarly journals Structure property relationships in gallium oxide thin films grown by pulsed laser deposition

2016 ◽  
Vol 6 (04) ◽  
pp. 348-353 ◽  
Author(s):  
Lauren M. Garten ◽  
Andriy Zakutayev ◽  
John D. Perkins ◽  
Brian P. Gorman ◽  
Paul F. Ndione ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gallium Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Property ◽  
Oxide Thin Films ◽  
Structure Property Relationships ◽  
Image Position

Abstract

ATOMIC SCALE STRUCTURE AND MAGNETIC PROPERTIES OF SOME METALLIC ALLOY GLASSES

1975 ◽  
Vol 36 (C2) ◽  
pp. C2-73-C2-74
Author(s):  
G. S. CARGILL
Keyword(s):  
Magnetic Properties ◽  
Scale Structure ◽  
Metallic Alloy ◽  
Atomic Scale ◽  
Atomic Scale Structure

Structure-property correlations in aluminum oxide thin films grown by reactive AC magnetron sputtering

2006 ◽  
Vol 201 (3-4) ◽  
pp. 1109-1116 ◽  
Author(s):  
Atul Khanna ◽  
Deepak G. Bhat ◽  
Adrian Harris ◽  
Ben D. Beake
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Aluminum Oxide ◽  
Structure Property ◽  
Oxide Thin Films ◽  
Property Correlations

Atomic Scale Structure-Property Relationships of Defects and Interfaces in Ceramics

1998 ◽  
Vol 4 (S2) ◽  
pp. 556-557
Author(s):  
S. Stemmer ◽  
G. Duscher ◽  
E. M. James ◽  
M. Ceh ◽  
N.D. Browning
Keyword(s):  
Point Defects ◽  
High Resolution Electron Microscopy ◽  
Complete Characterization ◽  
Atomic Scale ◽  
Structure Property ◽  
Defect Engineering ◽  
Impurity Atoms ◽  
Structure Property Relationships ◽  
Resolution Electron ◽  
Scale Composition

The evaluation of the two dimensional projected atom column positions around a defect or an interface in an electronic ceramic, as it has been performed in numerous examples by (quantitative) conventional high-resolution electron microscopy (HRTEM), is often not sufficient to relate the electronic properties of the material to the structure of the defect. Information about point defects (vacancies, impurity atoms), and chemistry or bonding changes associated with the defect or interface is also required. Such complete characterization is a necessity for atomic scale interfacial or defect engineering to be attained.One instructive example where more than an image is required to understand the structure property relationships, is that of grain boundaries in Fe-doped SrTi03. Here, the different formation energies of point defects cause a charged barrier at the boundary, and a compensating space charge region around it. The sign and magnitude of the barrier depend very sensitively on the atomic scale composition and chemistry of the boundary plane.

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