Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

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Interface state density in the interelectrode region of overlapping polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.330426 ◽

1982 ◽

Vol 53 (12) ◽

pp. 9146-9153 ◽

Cited By ~ 7

Author(s):

X. Q. Zheng ◽

K. Hofmann ◽

M. Schulz ◽

L. Risch

Keyword(s):

Polycrystalline Silicon ◽

Interface State ◽

State Density ◽

Interface State Density

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Interface state Density and Barrier Height Improvement in Ammonium Sulfide Treated Si/Al2O3 Interfaces

Current Applied Physics ◽

10.1016/j.cap.2021.03.019 ◽

2021 ◽

Author(s):

Khushabu Agrawal ◽

Vilas S. Patil ◽

Fida Ali ◽

Matheus Rabelo ◽

Won Jong Yoo ◽

...

Keyword(s):

Barrier Height ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Ammonium Sulfide

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Electron Bean Induced Defects in Silicon/Indium Oxide Heterojunctions and Interfacial Reactions During Annealing

MRS Proceedings ◽

10.1557/proc-76-301 ◽

1986 ◽

Vol 76 ◽

Author(s):

S. Kar ◽

A. Pandey ◽

R. K. Dwivedi

Keyword(s):

Experimental Data ◽

Charge Density ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Fixed Charge Density ◽

Induced Defects

ABSTRACTSi/In203 diodes have been prepared by e-beam evaporation of In203 tablets. Annealing of these devices was carried out in N2 and H2 /N2 mixture at 1 atm. in the temperature range of 400–800°C. Experimental data indicated a large increase in the Schottky barrier height and growth of interfacial oxide during annealing. The interface state density was reduced by a factor of 2, but the results indicated the increase in the barrier height to be mainly due to reduction of positive fixed charge density.

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Grain boundary barrier height and threshold voltage model of polycrystalline silicon thin film transistors

2010 International Workshop on Junction Technology Extended Abstracts ◽

10.1109/iwjt.2010.5474902 ◽

2010 ◽

Author(s):

Hongyu He ◽

Xueren Zheng

Keyword(s):

Thin Film ◽

Grain Boundary ◽

Barrier Height ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film ◽

Threshold Voltage Model ◽

Grain Boundary Barrier

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MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation

MRS Proceedings ◽

10.1557/proc-815-j8.2 ◽

2004 ◽

Vol 815 ◽

Cited By ~ 3

Author(s):

T. Kimoto ◽

Y. Kanzaki ◽

M. Noborio ◽

H. Kawano ◽

H. Matsunami

Keyword(s):

Doping Concentration ◽

Interface State ◽

Interface Structure ◽

State Density ◽

Interface State Density ◽

Interface Properties ◽

Crystal Face ◽

Channel Mobility ◽

Pile Up ◽

Effective Channel

Abstract4H-SiC(0001), (000-1), and (11-20) have been directly oxidized by N2O at 1300°C, and the MOS interfaces have been characterized. The interface state density has been significantly reduced by N2O oxidation on any face, compared to conventional wet O2 oxidation at 1150°C. Planar n-channel MOSFETs fabricated on lightly-doped 4H-SiC(0001), (000-1) and (11-20) faces have shown an effective channel mobility of 26, 43, and 78 cm2/Vs, respectively. The mobility decreased with increasing the doping concentration of p-body. SIMS analyses have revealed a clear pile-up of nitrogen atoms near the MOS interface. The thickness of interfacial SiCxOy layer can be decreased by utilizing N2O oxidation. The crystal face dependence of interface structure is discussed.

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