Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Interface State Density Evaluation of p-Type and n-Type Ge/GeNxStructures by Conductance Technique

2015 ◽  
Vol 98 (6) ◽  
pp. 8-15
Author(s):  
TAKURO IWASAKI ◽  
TOSHIRO ONO ◽  
YOHEI OTANI ◽  
YUKIO FUKUDA ◽  
HIROSHI OKAMOTO
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

2013 ◽  
Vol 34 (5) ◽  
pp. 052002 ◽  
Author(s):  
Jiahong Zhang ◽  
Qingquan Liu ◽  
Yixian Ge ◽  
Fang Gu ◽  
Min Li ◽  
...  
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Type Silicon ◽  
P Type

Au Ohmic Contacts to P-Type Hg1-xCdxte Utilizing Thin Interfacial Layers

1990 ◽  
Vol 181 ◽  
Author(s):  
V. Krishnamurthy ◽  
A. Simmons ◽  
C. R. Helms
Keyword(s):  
Interfacial Layer ◽  
Ohmic Contacts ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interfacial Chemistry ◽  
Interfacial Layers ◽  
Ohmic Behavior ◽  
P Type ◽  
Thin Plasma

ABSTRACTOhmic behavior is observed in electroless Au contacts to p -type Hg1−xCdxTe. Our investigation of the interfacial chemistry of such contacts suggest that this ohmic behavior may be due to the presence of a Te,O, and CI layer. To verify this correlation with interfacial chemistry, thin plasma oxide layers were used in evaporated Au contacts. The annealed plasma oxidized contacts exhibited low contact resistances. This behavior was attributed to a low interface state density at the interfacial layer/Hg1−xCdxTe interface. In comparison, as-deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.

Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor

2008 ◽  
Vol 600-603 ◽  
pp. 735-738 ◽  
Author(s):  
Shinji Nakagomi ◽  
Kenta Sato ◽  
Shun Suzuki ◽  
Yoshihiro Kokubun
Keyword(s):  
Oxide Layer ◽  
Time Constant ◽  
Oxide Thickness ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Oxide Semiconductor ◽  
Mos Capacitor ◽  
Conductance Technique ◽  
Ambient Gas

A metal-oxide-semiconductor (MOS) capacitor was fabricated using 4H-SiC epitaxial layer, and the interface state was evaluated in oxygen and hydrogen ambient under high-temperature conditions by the AC conductance technique. The relationships between interface state density (Dit), and corresponding time constant (tit) were obtained. Influences of oxide thickness and of gate metal (Pt or Al) were studied. Dit of Pt gate capacitor is influenced by ambient gas at higher temperature but Dit of Al gate capacitor is little affected by ambient gas. Dit of capacitor with thicker oxide layer tends to be lower than that of capacitor with thinner oxide layer. Interface states with larger time constant are decreased for hydrogen ambient comparing with oxygen ambient in the Pt gate capacitor.

scholarly journals Interface-state density estimation of n-type nanocrystalline FeSi 2 /p-type Si heterojunctions fabricated by pulsed laser deposition

2017 ◽  
Vol 8 (3) ◽  
pp. 035016
Author(s):  
Adison Nopparuchikun ◽  
Nathaporn Promros ◽  
Phongsaphak Sittimart ◽  
Peeradon Onsee ◽  
Asanlaya Duangrawa ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Density Estimation ◽  
Pulsed Laser ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Laser Deposition ◽  
P Type

Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density

1996 ◽  
Vol 69 (2) ◽  
pp. 230-232 ◽  
Author(s):  
Zhi Chen ◽  
Dae‐Gyu Park ◽  
Francke Stengal ◽  
S. Noor Mohammad ◽  
Hadis Morkoç
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
P Type
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