Environment for thin-film manufacturing process development for product engineering of micro and nano devices

2009 ◽  
Author(s):  
Dirk Ortloff ◽  
Kai Hahn ◽  
Jens Popp ◽  
Thilo Schmidt ◽  
Rainer Brück
Author(s):  
Bahadır Tunaboylu ◽  
Biset Toprak ◽  
Ahmet Korhan Binark ◽  
Osman Öztürk ◽  
Selim Zaim

Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.


2014 ◽  
Vol 85 (12) ◽  
pp. 123103 ◽  
Author(s):  
A. Biswas ◽  
R. Sampathkumar ◽  
Ajaya Kumar ◽  
D. Bhattacharyya ◽  
N. K. Sahoo ◽  
...  

Author(s):  
David E. Lee ◽  
H. Thomas Hahn

Abstract In order to address the computational costs of modeling and analyzing manufacturing processes, a novel approach to virtual manufacturing process engineering using generic modular operations is presented. Relying on a state based representation of operation control for a simplified virtual manufacturing workcell, the valid states for each sequence of generic modular operations are aggregated and both operation state and processing constraints applied to specify the subtasks required to complete each step in a product’s process plan. By adopting this state based control approach, virtual process engineering provides a direct mechanism to map virtual process representations onto actualized processes. Using these generic modular operations and their temporal and processing dependencies, the computationally complex elements of virtual manufacturing process simulation can be directly identified and an architecture for virtual process development specified. Examples from both machining and assembly processes are provided.


2014 ◽  
Vol 2014 ◽  
pp. 1-11 ◽  
Author(s):  
Xiangbo Song ◽  
Xu Ji ◽  
Ming Li ◽  
Weidong Lin ◽  
Xi Luo ◽  
...  

Cu2ZnSnS4is considered as the ideal absorption layer material in next generation thin film solar cells due to the abundant component elements in the crust being nontoxic and environmentally friendly. This paper summerized the development situation of Cu2ZnSnS4thin film solar cells and the manufacturing technologies, as well as problems in the manufacturing process. The difficulties for the raw material’s preparation, the manufacturing process, and the manufacturing equipment were illustrated and discussed. At last, the development prospect of Cu2ZnSnS4thin film solar cells was commented.


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