Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes
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2009 ◽
Vol 15
(4)
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pp. 1066-1072
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1994 ◽
Vol 137
(3-4)
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pp. 400-404
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2011 ◽
Vol 62
(1)
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pp. 142-145
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2001 ◽
Vol 40
(Part 2, No. 7B)
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pp. L738-L740
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