X-ray moiré patterns of silicon crystals with distortions caused by local concentrated forces

2011 ◽  
Author(s):  
Igor M. Fodchuk ◽  
Igor V. Fesiv ◽  
Sergiy M. Novikov ◽  
Yaroslav M. Struk
Keyword(s):  
X Ray ◽  
Silicon Crystals ◽  
Concentrated Forces

How Accurate is Qcbed ? -- the Case of Rutile (TiO2)

2001 ◽  
Vol 7 (S2) ◽  
pp. 368-369
Author(s):  
B. Jiang ◽  
J. Friis ◽  
J.C.H. Spence
Keyword(s):  
Systematic Errors ◽  
Mean Value ◽  
Order Structure ◽  
Data Sets ◽  
X Ray ◽  
Silicon Crystals ◽  
Structure Factors ◽  
The Mean ◽  
Mott Formula ◽  
Better Than

An accuracy of better than 1% is needed to measure the changes in charge density due to bonding. Here we report an accuracy up to 0.025% (random error) obtained in rutile crystal structure factors measurement by QCBED. This error is the standard deviation in the mean value obtained from ten data sets. Systematic errors may be present. Figure 1 gives an example of the (200) refinement results. Table 1 lists several low order structure factor refinement results. The accuracy of the measured electron structure factors was 0.1-0.2% but after conversion to x-ray structure factors, the accuracy for low orders improved due to the Mott formula [1] For (110) and (101) reflections, the accuracy in x-ray structure factors became 0.025% and 0.048% respectively. This accuracy is equivalent to that of the X-ray single crystal Pendellosung method on silicon crystals [2].The experiments were done on a Leo 912 Omega TEM.

Investigation of surface acoustic wave fields in silicon crystals by x-ray diffraction: A dynamical theory approach

2005 ◽  
Vol 97 (11) ◽  
pp. 113505 ◽  
Author(s):  
R. Tucoulou ◽  
O. Mathon ◽  
C. Ferrero ◽  
V. Mocella ◽  
D. V. Roshchupkin ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Dynamical Theory ◽  
Theory Approach ◽  
X Ray Diffraction ◽  
Wave Fields ◽  
X Ray ◽  
Silicon Crystals

Picosecond X-ray Diffraction: System and Applications

1994 ◽  
Vol 38 ◽  
pp. 21-33
Author(s):  
I. V. Tomov ◽  
P. Chen ◽  
P. M. Rentzepis
Keyword(s):  
Heat Transport ◽  
Time Resolution ◽  
Laser Pulses ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Silicon Crystals ◽  
193 Nm ◽  
Gold Platinum

Abstract We report the development of a novel, pulsed x-ray diffraction system with picosecond time resolution. The system has been used to study the heat transport in gold, platinum and silicon crystals heated by 10 ps, 193 nm laser pulses. Further developments and applications of time resolved picosecond x-ray diffraction are discussed.

X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions

2019 ◽  
Vol 64 (5) ◽  
pp. 680-685 ◽  
Author(s):  
V. E. Asadchikov ◽  
I. G. D’yachkova ◽  
D. A. Zolotov ◽  
Yu. S. Krivonosov ◽  
F. N. Chukhovskii
Keyword(s):  
Hydrogen Ions ◽  
X Ray ◽  
Silicon Crystals
Sign in / Sign up

Export Citation Format

Share Document