SU-E-T-306: Electronic Equilibrium in RBE of DSB Induction in Monte Carlo Simulations of Low Energy Photon and Electron Track Structures

2013 ◽  
Vol 40 (6Part15) ◽  
pp. 275-275
Author(s):  
P Pater ◽  
J Seuntjens ◽  
M Bernal ◽  
I El Naqa
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Low Energy ◽  
Energy Photon ◽  
Electron Track

Interface dosimetry: measurements and Monte Carlo simulations of low-energy photon beams

2001 ◽  
Vol 61 (3-6) ◽  
pp. 593-595 ◽  
Author(s):  
Indra J. Das ◽  
Alireza Kassaee ◽  
Frank Verhaegen ◽  
Vadim P. Moskvin
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Low Energy ◽  
Photon Beams ◽  
Energy Photon

Quantitative Analysis of the Evolution of Surface Growth Morphology in LEEM

1998 ◽  
Vol 05 (06) ◽  
pp. 1151-1158 ◽  
Author(s):  
J. B. Hannon ◽  
G. L. Kellogg ◽  
M. C. Bartelt ◽  
N. C. Bartelt
Keyword(s):  
Electron Microscopy ◽  
Monte Carlo ◽  
Quantitative Analysis ◽  
Diffusion Equation ◽  
Monte Carlo Simulations ◽  
Low Energy ◽  
Growth Morphology ◽  
Equation Analysis ◽  
Low Energy Electron ◽  
And Diffusion

We describe Monte Carlo simulations and diffusion equation analysis which are useful in deriving kinetic parameters from low energy electron microscopy experiments. An analysis of the etching of the Si(001) surface with molecular oxygen is made, illustrating the power of these techniques.

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