Solid solution InxGa1−x AsySbzP1−y−z : A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy

Effect of LiCl·H2O on sintering properties of MgO prepared from natural brine from Qarhan Salt Lake, crystalline bischofite and MgCl2·6H2O(AR) was studied. The results showed that LiCl·H2O of addition exceeded 1 wt% had promoting effect on sintering of magnesia prepared from MgCl2·6H2O(AR). While 1.5 wt% LiCl·H2O was added, the bulk density of magnesia was 3.40 g/cm3, and the relative density was 95.0%. With 0.5 wt% LiCl·H2O, the bulk densities of magnesia prepared from crystalline bischofite and brine were 3.04 and 3.10 g/cm3, and the relative densities increased by 8.4% and 14.8%, respectively. The main mechanism for promoting MgO sintering with LiCl·H2O was that Li2O produced by hydrolysis solubilized in MgO to form solid solutions and oxygen vacancies which were favorable to sintering. The main reasons for promoting sintering of brine magnesia with LiCl·H2O were solid solution and liquid phase sintering, while the main reason was solid solution for magnesia from crystalline bischofite and MgCl2·6H2O(AR).

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InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy

Applied Physics Letters ◽

10.1063/1.114616 ◽

1995 ◽

Vol 67 (17) ◽

pp. 2486-2487 ◽

Cited By ~ 2

Author(s):

Yu. B. Bolkhovityanov ◽

A. S. Jaroshevich ◽

N. V. Nomerotsky ◽

M. A. Revenko ◽

E. M. Trukhanov

Keyword(s):

Liquid Phase ◽

Solid Solutions ◽

Liquid Phase Epitaxy

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Liquid phase epitaxy of (Sn2)1−x (InSb)x solid solution layers

Technical Physics Letters ◽

10.1134/1.1526886 ◽

2002 ◽

Vol 28 (11) ◽

pp. 927-928 ◽

Cited By ~ 1

Author(s):

A. S. Saidov ◽

A. Sh. Razzakov ◽

D. V. Saparov

Keyword(s):

Solid Solution ◽

Liquid Phase ◽

Liquid Phase Epitaxy

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Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

Materials Chemistry and Physics ◽

10.1016/s0254-0584(00)00230-3 ◽

2001 ◽

Vol 68 (1-3) ◽

pp. 1-6 ◽

Cited By ~ 21

Author(s):

A.S. Saidov ◽

A.Sh. Razzakov ◽

V.A. Risaeva ◽

E.A. Koschanov

Keyword(s):

Liquid Phase ◽

Solid Solutions ◽

Liquid Phase Epitaxy

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Growth of SiC and SiC-AlN solid solution by container-free liquid phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90345-w ◽

1993 ◽

Vol 128 (1-4) ◽

pp. 343-348 ◽

Cited By ~ 24

Author(s):

Vladimir Dmitriev ◽

Arthur Cherenkov

Keyword(s):

Solid Solution ◽

Liquid Phase ◽

Liquid Phase Epitaxy

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Growth of Ga1−xInxAsySb1−y solid solutions from the five-component Ga–In–As–Sb–Pb melt by liquid phase epitaxy

Applied Surface Science ◽

10.1016/s0169-4332(98)00677-1 ◽

1999 ◽

Vol 142 (1-4) ◽

pp. 371-374 ◽

Cited By ~ 5

Author(s):

E.V Kunitsyna ◽

I.A Andreev ◽

N.A Charykov ◽

Yu.V Solov'ev ◽

Yu.P Yakovlev

Keyword(s):

Liquid Phase ◽

Solid Solutions ◽

Liquid Phase Epitaxy

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The Effect of Composition Dependent Lattice Strain on the Chemical Potential of Tellurium in Pb1−xSnxSe1−yTey Quaternary Alloys

MRS Proceedings ◽

10.1557/proc-311-149 ◽

1993 ◽

Vol 311 ◽

Author(s):

Patrick J. Mccann

Keyword(s):

Solid Solution ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Strain Energy ◽

Lattice Strain ◽

Chemical Potential ◽

X Ray Diffraction ◽

Quaternary Alloys ◽

X Ray ◽

Lattice Matched

ABSTRACTIV-VI semiconductor Pb1−xsSnxsSe1−ysTeys quaternary alloys were grown on (111) BaF2 by liquid phase epitaxy (LPE). X-ray diffraction analysis shows that liquid (Pb1−x1Snx1)0.99(Se1−y1Tey1)0.01 solutions produce alloys lattice-matched with the substrate wheny1 = 60%, 58%, and 57%, and x1 = 20%, 40%, and 60%, respectively. These data suggest that the chemical potential of tellurium in the Pb1−xsSnxsSe1−ysTeys solid solution decreases as tin and tellurium concentrations increase. It is argued that this reduction is due to decreasing strain energy driven segregation of tellurium from the solid to the liquid as the tin concentration increases.

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Фотоэлектрические преобразователи узкополосного излучения на основе гетероструктур InGaAsP/InP

Физика и техника полупроводников ◽

10.21883/ftp.2021.11.51566.9688 ◽

2021 ◽

Vol 55 (11) ◽

pp. 1091

Author(s):

Н.С. Потапович ◽

М.В. Нахимович ◽

В.П. Хвостиков

Keyword(s):

Liquid Phase ◽

Indium Phosphide ◽

Solid Solutions ◽

Liquid Phase Epitaxy ◽

Narrow Band ◽

High Quality ◽

Technological Regimes ◽

Wide Range ◽

Photoelectric Converters

Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 µm) based on InGaAsP / InP heterostructures with an epitaxial p / n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.

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