Effect of size dispersion on the optical absorption of an ensemble of semiconductor quantum dots

1998 ◽  
Vol 32 (11) ◽  
pp. 1229-1233 ◽  
Author(s):  
M. I. Vasilevskii ◽  
E. I. Akinkina ◽  
A. M. de Paula ◽  
E. V. Anda
2002 ◽  
Vol 12 (01) ◽  
pp. 15-43 ◽  
Author(s):  
ANDREW J. WILLIAMSON

We describe a procedure for calculating the electronic structure of semiconductor quantum dots containing over one million atoms. The single particle electron levels are calculated by solving a Hamiltonian constructed from screened atomic pseudopotentials. Effects beyond the single particle level such as electron and hole exchange and correlation interactions are described using a configuration interaction (CI) approach. Application of these methods to the calculation of the optical absorption spectrum, Coulomb repulsions and multi-exciton binding energies of InGaAs self-assembled quantum dots are presented.


1993 ◽  
Vol 47 (12) ◽  
pp. 7132-7139 ◽  
Author(s):  
Lavanya M. Ramaniah ◽  
Selvakumar V. Nair

2002 ◽  
Vol 92 (12) ◽  
pp. 7149-7152 ◽  
Author(s):  
D. Mohanta ◽  
S. S. Nath ◽  
A. Bordoloi ◽  
A. Choudhury ◽  
S. K. Dolui ◽  
...  

1988 ◽  
Vol 144 ◽  
Author(s):  
John C. Luong ◽  
Nicholas F. Borrelli

ABSTRACTSpatially quantized systems of III–V compounds have, in recent years, attracted considerable theoretical interest. However, the fabrication of quantum dots, a three-dimensionally quantum-confined microstructure, is particularly cumbersome and requires sophisticated lateral patterning techniques. A method, reported recently, which utilizes the microporosity of Vycor brand porous glass to produce quantum-confined microcrystals of II–VI and IV–VI semiconductors, is now extended to the fabrication of III–V quantum dots, by incorporating a microwave plasma assisted MOCVD technique. In this process, organometallic precursors impregnated in porous glass can be effectively cracked to deposit III–V microcrystals in glass. The results are discussed in light of the quantum size effect manifested by the optical absorption and photoluminescence data.


1990 ◽  
Vol 04 (16) ◽  
pp. 1009-1016 ◽  
Author(s):  
Y.Z. HU ◽  
S.W. KOCH ◽  
D.B. TRAN THOAI

Coulomb and quantum confinement effects in small semiconductor microcrystallites are analyzed. Energies and wavefunctions for one- and two-electron-hole-pair states are computed and optical absorption spectra are evaluated.


2008 ◽  
Vol 07 (02n03) ◽  
pp. 151-160 ◽  
Author(s):  
ABHISHEK VERMA ◽  
P. K. PANDEY ◽  
J. KUMAR ◽  
S. NAGPAL ◽  
P. K. BHATNAGAR ◽  
...  

Wide bandgap II–VI semiconductor quantum dots embedded in glass matrix have shown great potential for opto-electronic device applications. The current problem is to achieve low size dispersion, high volume fraction, and better control over the size of the quantum dots in glass matrix. In this work, a modified growth method has been proposed to achieve a greater control over the size of quantum dots, to reduce their size dispersion and to increase their volume fraction. A theoretical model has been developed to quantitatively estimate the various parameters of the quantum dots. The effects of aging on various parameters of quantum dots in Semiconductor-Doped Glass (SDG) samples have also been discussed in the present work.


2007 ◽  
Vol 31 ◽  
pp. 59-61
Author(s):  
Subindu Kumar ◽  
Dipankar Biswas ◽  
Tapas Das

In recent years there have been extensive studies on III-V semiconductor quantum dots (QDs). In this paper we have formulated the absorption spectra of a realistic QD system with dot size distribution described by a Gaussian function. The dots were approximated as cubic boxes having finite potentials at the boundaries. The effects of size non uniformity on the optical absorption spectra of a realistic QD system was analyzed and the results have been compared with ideal dots having infinite potentials at the boundaries.


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