Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates

2002 ◽  
Vol 28 (11) ◽  
pp. 964-966 ◽  
Author(s):  
V. A. Odnoblyudov ◽  
A. Yu. Egorov ◽  
N. V. Kryzhanovskaya ◽  
A. G. Gladyshev ◽  
V. V. Mamutin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Gaas Substrates

Room temperature photoluminescence of PbS quantum dots: Capping agent and thermal effect

Luminescence ◽  
2019 ◽  
Vol 34 (3) ◽  
pp. 387-390
Author(s):  
Ha‐Sung Kong ◽  
Byoung‐Ju Kim ◽  
Kwang‐Sun Kang
Keyword(s):  
Quantum Dots ◽  
Thermal Effect ◽  
Room Temperature ◽  
Capping Agent ◽  
Room Temperature Photoluminescence ◽  
Pbs Quantum Dots

Enhancement of room-temperature photoluminescence in InAs quantum dots

2003 ◽  
Vol 83 (21) ◽  
pp. 4300-4302 ◽  
Author(s):  
W. Lu ◽  
Y. L. Ji ◽  
G. B. Chen ◽  
N. Y. Tang ◽  
X. S. Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Room Temperature Photoluminescence

scholarly journals Субмонослойные квантовые точки InGaAs/GaAs, выращенные методом МОС-гидридной эпитаксии

2019 ◽  
Vol 53 (8) ◽  
pp. 1159
Author(s):  
В.Я. Алешкин ◽  
Н.В. Байдусь ◽  
А.А. Дубинов ◽  
К.Е. Кудрявцев ◽  
С.М. Некоркин ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Room Temperature ◽  
Optical Pumping ◽  
Liquid Nitrogen Temperature ◽  
Stimulated Emission ◽  
Threshold Power ◽  
Gaas Substrates ◽  
Dot Density ◽  
Hydride Epitaxy

AbstractThe mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 10^10 cm^–2 is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm^2.

scholarly journals Использование микродисковых лазеров с квантовыми точками InAs/InGaAs для биодетектирования

2019 ◽  
Vol 45 (23) ◽  
pp. 10
Author(s):  
М.В. Фетисова ◽  
А.А. Корнев ◽  
А.С. Букатин ◽  
Н.А. Филатов ◽  
И.Е. Елисеев ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Monoclonal Antibodies ◽  
Active Region ◽  
Room Temperature ◽  
Optical Pumping ◽  
Threshold Power ◽  
Gaas Substrates ◽  
Microdisk Lasers ◽  
Resonant Laser ◽  
Secondary Antibodies

The paper demonstrates the possibility of using microdisk lasers 10 µm in diameter with an active region based on InAs/InGaAs quantum dots synthesized on GaAs substrates for biodetection. As a detectable object we used chimeric monoclonal antibodies to the CD20 protein covalently attached to the surface of microdisk lasers operating under optical pumping at room temperature in an aqueous medium. It was shown that the attached secondary antibodies cause an increase in the threshold power of lasing and also to an increase in the half-width of the resonant laser line.

1.59μm room temperature emission from metamorphic InAs∕InGaAs quantum dots grown on GaAs substrates

2008 ◽  
Vol 92 (21) ◽  
pp. 213104 ◽  
Author(s):  
L. Seravalli ◽  
P. Frigeri ◽  
G. Trevisi ◽  
S. Franchi
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Gaas Substrates

Enhancement of Room Temperature Photoluminescence from InAs Quantum Dots by Irradiating Mn

2007 ◽  
Vol 46 (No. 34) ◽  
pp. L801-L803
Author(s):  
Seiji Nagahara ◽  
Masahiko Shimoda ◽  
Shiro Tsukamoto ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Room Temperature Photoluminescence

Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates

2020 ◽  
Vol 117 (2) ◽  
pp. 021102
Author(s):  
R. H. El-Jaroudi ◽  
K. M. McNicholas ◽  
A. F. Briggs ◽  
S. D. Sifferman ◽  
L. Nordin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Gaas Substrates

Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots

2011 ◽  
Vol 99 (14) ◽  
pp. 143123 ◽  
Author(s):  
T. Nguyen Thanh ◽  
C. Robert ◽  
C. Cornet ◽  
M. Perrin ◽  
J. M. Jancu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
High Density ◽  
Room Temperature Photoluminescence
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