scholarly journals Субмонослойные квантовые точки InGaAs/GaAs, выращенные методом МОС-гидридной эпитаксии

2019 ◽  
Vol 53 (8) ◽  
pp. 1159
Author(s):  
В.Я. Алешкин ◽  
Н.В. Байдусь ◽  
А.А. Дубинов ◽  
К.Е. Кудрявцев ◽  
С.М. Некоркин ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Room Temperature ◽  
Optical Pumping ◽  
Liquid Nitrogen Temperature ◽  
Stimulated Emission ◽  
Threshold Power ◽  
Gaas Substrates ◽  
Dot Density ◽  
Hydride Epitaxy

AbstractThe mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 10^10 cm^–2 is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm^2.

scholarly journals Использование микродисковых лазеров с квантовыми точками InAs/InGaAs для биодетектирования

2019 ◽  
Vol 45 (23) ◽  
pp. 10
Author(s):  
М.В. Фетисова ◽  
А.А. Корнев ◽  
А.С. Букатин ◽  
Н.А. Филатов ◽  
И.Е. Елисеев ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Monoclonal Antibodies ◽  
Active Region ◽  
Room Temperature ◽  
Optical Pumping ◽  
Threshold Power ◽  
Gaas Substrates ◽  
Microdisk Lasers ◽  
Resonant Laser ◽  
Secondary Antibodies

The paper demonstrates the possibility of using microdisk lasers 10 µm in diameter with an active region based on InAs/InGaAs quantum dots synthesized on GaAs substrates for biodetection. As a detectable object we used chimeric monoclonal antibodies to the CD20 protein covalently attached to the surface of microdisk lasers operating under optical pumping at room temperature in an aqueous medium. It was shown that the attached secondary antibodies cause an increase in the threshold power of lasing and also to an increase in the half-width of the resonant laser line.

Fabrication and Properties of AlGaN/GaInN Double Heterostructure Grown on 6H-SiC(0001)Si

1995 ◽  
Vol 395 ◽  
Author(s):  
Hiroshi Amano ◽  
Shigetoshi Sota ◽  
Masaki Nishikawa ◽  
Masato Yoshida ◽  
Makoto Kawaguchi ◽  
...  
Keyword(s):  
Power Efficiency ◽  
Room Temperature ◽  
Optical Pumping ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Laser Action ◽  
Stimulated Emission ◽  
Threshold Power ◽  
Light Emitting ◽  
Double Heterostructures

ABSTRACTAlGaN/GalnN double heterostructures (DH) were fabricated by metalorganic vapor phase epitaxy on the (0001)Si 6H-SiC substrate. A cleaved edge shows a very flat surface with roughness on the order of one monolayer. Stimulated emission and laser action from the UV to blue region was observed by optical pumping at room temperature (RT). The threshold power density was 27KW/cm2 which is smaller than that of the same structure grown on a sapphire (0001) substrate by a factor of four. A AlGaN/GalnN DH UV light emitting diode, using undoped GalnN is fabricated. The power efficiency and spectra width of this LED is comparable or superior to that of an LED having the same structure but grown on sapphire.

Optical Characterization of CdSe Colloidal Quantum Dot/ MEH-PPV Polymer Nanocomposites Spin-cast on GaAs Substrates

2006 ◽  
Vol 939 ◽  
Author(s):  
Adrienne D. Stiff-Roberts ◽  
Abhishek Gupta ◽  
Zhiya Zhao
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Optoelectronic Devices ◽  
Photogenerated Electron ◽  
Polymer Nanocomposite ◽  
Colloidal Quantum Dots ◽  
Infrared Light ◽  
Gaas Substrates ◽  
Conducting Polymer Nanocomposite ◽  
Colloidal Quantum Dot

ABSTRACTThe motivation and distinct approach for this work is the use of intraband transitions within colloidal quantum dots for the detection of mid- (3-5 μm) and/or long-wave (8-14 μm) infrared light. The CdSe colloidal quantum dot/MEH-PPV conducting polymer nanocomposite material is well-suited for this application due to the ∼1.5 eV difference between the corresponding electron affinities. Therefore, CdSe colloidal quantum dots embedded in MEH-PPV should provide electron quantum confinement such that intraband transitions can occur in the conduction band. Further, it is desirable to deposit these nanocomposites on semiconductor substrates to enable charge transfer of photogenerated electron-hole pairs from the substrate to the nanocomposite. In this way, optoelectronic devices analogous to those achieved using Stranski-Krastanow quantum dots grown by epitaxy can be realized. To date, there have been relatively few investigations of colloidal quantum dot nanocomposites deposited on GaAs substrates. However, it is crucial to develop a better understanding of the optical properties of these hybrid material systems if such heterostructures are to be used for optoelectronic devices, such as infrared photodetectors. By depositing the nanocomposites on GaAs substrates featuring different doping characteristics and measuring the corresponding Fourier transform infrared absorbance, the feasibility of these intraband transitions is demonstrated at room temperature.

Excitation Transfer through Quantum Dots Measured by Microluminescence: Dependence on the Quantum Dot Density

2001 ◽  
Vol 187 (1) ◽  
pp. 45-48 ◽  
Author(s):  
F.V. de Sales ◽  
S.W. da Silva ◽  
A.F.G. Monte ◽  
M.A.G. Soler ◽  
M.J. Da Silva ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Excitation Transfer ◽  
Dot Density

Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 605-607 ◽  
Author(s):  
Tzer-En Nee ◽  
Nien-Tze Yeh ◽  
Po-Wen Shiao ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Gaas Substrates ◽  
Room Temperature Operation

Optical Nmr From Single Quantum Dots

1996 ◽  
Vol 442 ◽  
Author(s):  
S. W. Brown ◽  
T. A. Kennedy ◽  
D. Gammon
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Nuclear Orientation ◽  
Energy Levels ◽  
Zeeman Splitting ◽  
Single Quantum ◽  
Interface Fluctuations ◽  
20 Nm

AbstractWe have observed nuclear magnetic resonance (NMR) signatures from constituent Ga and As nuclei in single GaAs quantum dots formed by interface fluctuations in GaAs/AlGaAs quantum wells. Orientation of the nuclear spin system by optical pumping causes an Overhauser shift in the excitonic energy levels proportional to the degree of nuclear orientation. NMR was detected by monitoring changes in the combined Overhauser plus Zeeman splitting of an exciton localized in a single quantum dot as the RF frequency was swept through a nuclear resonance. The NMR signals originate from ∼105 nuclei in the quantum dot — (20 nm)3 volume - representing an increase in sensitivity of five orders of magnitude over previous optical NMR measurements and thirteen orders of magnitude over conventional NMR. The data were fit to Lorentzian lineshapes, giving 75As linewidths on the order of 20 kHz.

MOVPE GROWTH OF THE InP BASED MID-IR EMISSION QUANTUM DOT STRUCTURES

2013 ◽  
Vol 01 (02) ◽  
pp. 1350002
Author(s):  
XIAOHONG TANG ◽  
ZONGYOU YIN ◽  
BAOLIN ZHANG
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Emission ◽  
Emission Wavelength ◽  
Growth Method ◽  
Metal Organic ◽  
Size Uniformity ◽  
Dot Density ◽  
Inas Quantum Dot ◽  
Ir Emission

In this paper, semiconductor quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal–organic vapor phase epitaxy growth. The InAs quantum dots grown at different conditions have been investigated. To improve the grown quantum dot's shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the In x Ga 1-x As matrix layer of the InAs / In x Ga 1-x As / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest > 2.35 μm measured at 77 K. For the narrower bandgap semiconductor InAsSb quantum dots, the emission wavelength was measured at > 2.8 μm.

Movpe Growth of High Quality AlxGa1−xN/GayIn1-yN (x>0, y<1) Heterostructures for Short Wavelength Light Emitter

1994 ◽  
Vol 339 ◽  
Author(s):  
I. Akasaki ◽  
H. Amano
Keyword(s):  
Active Layer ◽  
Short Wavelength ◽  
Room Temperature ◽  
Optical Pumping ◽  
Molar Fraction ◽  
Stimulated Emission ◽  
Edge Mode ◽  
Peak Wavelength ◽  
High Quality ◽  
Low Threshold

ABSTRACTHigh-quality AlGaN/GaN and AlGaN/GalnN DHs were fabricated by MOVPE using low-temperature deposited AlN buffer layer. We applied the newly designed dual-flow-channel reactor, by which high-quality and well-controlled AlGaN and GalnN alloys and their heterostructures have been grown. AlGaN/GaN-DH shows low-threshold stimulated emission by optical pumping at room temperature for both edge and surface modes. The peak wavelength of stimulated emission for edge mode was 369.5nm. The peak wavelength of stimulated emission was affected by the strain due to heterostructure as well as the many body effect under high excitation. The wavelength for stimulated emission can be widely changed by using GalnN as the active layer. AlGaN/GalnN DH with InN molar fraction of the active layer of 0.09 shows room temperature low-threshold stimulated emission for edge mode by optical pumping with peak wavelength of 402.5nm. A few mW-class symmetrical AlGaN/GaN DH LED and anti symmetrical AlGaN/GalnN/GaN DH LED using low energy electron beam irradiation (LEEB1) treated Mg-doped P-AlGaN cladding layer were fabricated. These results show that column-Ill nitrides are promising for the realization of practical short wavelength LED and LD.

1.59μm room temperature emission from metamorphic InAs∕InGaAs quantum dots grown on GaAs substrates

2008 ◽  
Vol 92 (21) ◽  
pp. 213104 ◽  
Author(s):  
L. Seravalli ◽  
P. Frigeri ◽  
G. Trevisi ◽  
S. Franchi
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Gaas Substrates
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