Использование микродисковых лазеров с квантовыми точками InAs/InGaAs для биодетектирования

The paper demonstrates the possibility of using microdisk lasers 10 µm in diameter with an active region based on InAs/InGaAs quantum dots synthesized on GaAs substrates for biodetection. As a detectable object we used chimeric monoclonal antibodies to the CD20 protein covalently attached to the surface of microdisk lasers operating under optical pumping at room temperature in an aqueous medium. It was shown that the attached secondary antibodies cause an increase in the threshold power of lasing and also to an increase in the half-width of the resonant laser line.

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Субмонослойные квантовые точки InGaAs/GaAs, выращенные методом МОС-гидридной эпитаксии

Физика и техника полупроводников ◽

10.21883/ftp.2019.08.48011.9124 ◽

2019 ◽

Vol 53 (8) ◽

pp. 1159

Author(s):

В.Я. Алешкин ◽

Н.В. Байдусь ◽

А.А. Дубинов ◽

К.Е. Кудрявцев ◽

С.М. Некоркин ◽

...

Keyword(s):

Quantum Dots ◽

Quantum Dot ◽

Room Temperature ◽

Optical Pumping ◽

Liquid Nitrogen Temperature ◽

Stimulated Emission ◽

Threshold Power ◽

Gaas Substrates ◽

Dot Density ◽

Hydride Epitaxy

AbstractThe mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 10^10 cm^–2 is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm^2.

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Influence of coating layers on characteristics of microdisk lasers with InAs/InGaAs quantum dots active region

Journal of Physics Conference Series ◽

10.1088/1742-6596/1124/4/041020 ◽

2018 ◽

Vol 1124 ◽

pp. 041020

Author(s):

I Y Agafonov ◽

N V Kryzhanovskaya ◽

E I Moiseev ◽

A S Dragunova ◽

M V Fetisova ◽

...

Keyword(s):

Quantum Dots ◽

Active Region ◽

Microdisk Lasers ◽

Coating Layers

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Room temperature lasing of quantum wire VCSELs by optical pumping grown on the B GaAs substrates by MBE

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(02)00228-x ◽

2002 ◽

Vol 13 (2-4) ◽

pp. 892-895 ◽

Cited By ~ 6

Author(s):

Y Ohno ◽

H Kanamori ◽

S Shimomura ◽

S Hiyamizu

Keyword(s):

Quantum Wire ◽

Room Temperature ◽

Optical Pumping ◽

Gaas Substrates

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1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

MRS Proceedings ◽

10.1557/proc-794-t7.2/z7.2 ◽

2003 ◽

Vol 794 ◽

Author(s):

V.M. Ustinov ◽

A.E. Zhukov ◽

A.R. Kovsh ◽

N.A. Maleev ◽

S.S. Mikhrin ◽

...

Keyword(s):

Quantum Dots ◽

Active Region ◽

Quantum Wells ◽

Gaas Substrate ◽

Room Temperature ◽

Internal Quantum Efficiency ◽

Characteristic Temperature ◽

Optical Loss ◽

Threshold Current ◽

Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

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1.59μm room temperature emission from metamorphic InAs∕InGaAs quantum dots grown on GaAs substrates

Applied Physics Letters ◽

10.1063/1.2937095 ◽

2008 ◽

Vol 92 (21) ◽

pp. 213104 ◽

Cited By ~ 44

Author(s):

L. Seravalli ◽

P. Frigeri ◽

G. Trevisi ◽

S. Franchi

Keyword(s):

Quantum Dots ◽

Room Temperature ◽

Gaas Substrates

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1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures.

MRS Proceedings ◽

10.1557/proc-799-z7.2/t7.2 ◽

2003 ◽

Vol 799 ◽

Author(s):

V. M. Ustinov ◽

A. E. Zhukov ◽

A. R. Kovsh ◽

N. A. Maleev ◽

S. S. Mikhrin ◽

...

Keyword(s):

Quantum Dots ◽

Active Region ◽

Quantum Wells ◽

Gaas Substrate ◽

Room Temperature ◽

Internal Quantum Efficiency ◽

Characteristic Temperature ◽

Optical Loss ◽

Threshold Current ◽

Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%) and low internal losses (α=3–4 cm-1 ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm2 (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

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Near 1.3 ?m Emission at Room Temperature from InAsSb/GaAs Self-Assembled Quantum Dots on GaAs Substrates

physica status solidi (b) ◽

10.1002/1521-3951(200103)224:1<139::aid-pssb139>3.0.co;2-o ◽

2001 ◽

Vol 224 (1) ◽

pp. 139-142 ◽

Cited By ~ 12

Author(s):

K. Suzuki ◽

Y. Arakawa

Keyword(s):

Quantum Dots ◽

Room Temperature ◽

Gaas Substrates ◽

Self Assembled

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Output power of multilayered InGaAs/GaAs quantum well-dot microdisk lasers

Journal of Physics Conference Series ◽

10.1088/1742-6596/2086/1/012081 ◽

2021 ◽

Vol 2086 (1) ◽

pp. 012081

Author(s):

N A Fominykh ◽

E I Moiseev ◽

Ju A Guseva ◽

M V Maximov ◽

A I Lihachev ◽

...

Keyword(s):

Quantum Dots ◽

Active Region ◽

Quantum Well ◽

Output Power ◽

Optical Power ◽

Threshold Current ◽

Sudden Drop ◽

Output Optical Power ◽

Number Of Layers ◽

Microdisk Lasers

Abstract We studied the output optical power of microdisk lasers with InGaAs/GaAs quantum dots active region. An increase in the number of layers in the active region in the waveguide from 2 to 6 leads to increase in the peak output optical power due probably to increase of the gain. We also observe a corresponding increase of the threshold current due to the increase on the transparence current. The maximal optical power is achieved for structure with 6 layers at approximately 60 mA injection current. Further increase of the number of the QD layers to 10 results in increase of the threshold current and sudden drop of the output power.

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Fabrication and Properties of AlGaN/GaInN Double Heterostructure Grown on 6H-SiC(0001)Si

MRS Proceedings ◽

10.1557/proc-395-869 ◽

1995 ◽

Vol 395 ◽

Cited By ~ 1

Author(s):

Hiroshi Amano ◽

Shigetoshi Sota ◽

Masaki Nishikawa ◽

Masato Yoshida ◽

Makoto Kawaguchi ◽

...

Keyword(s):

Power Efficiency ◽

Room Temperature ◽

Optical Pumping ◽

Uv Light ◽

Light Emitting Diode ◽

Laser Action ◽

Stimulated Emission ◽

Threshold Power ◽

Light Emitting ◽

Double Heterostructures

ABSTRACTAlGaN/GalnN double heterostructures (DH) were fabricated by metalorganic vapor phase epitaxy on the (0001)Si 6H-SiC substrate. A cleaved edge shows a very flat surface with roughness on the order of one monolayer. Stimulated emission and laser action from the UV to blue region was observed by optical pumping at room temperature (RT). The threshold power density was 27KW/cm2 which is smaller than that of the same structure grown on a sapphire (0001) substrate by a factor of four. A AlGaN/GalnN DH UV light emitting diode, using undoped GalnN is fabricated. The power efficiency and spectra width of this LED is comparable or superior to that of an LED having the same structure but grown on sapphire.

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