Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

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Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence

Applied Surface Science ◽

10.1016/j.apsusc.2021.152249 ◽

2021 ◽

pp. 152249

Author(s):

Lu Zhang ◽

Haiyang Hong ◽

Kun Qian ◽

Songsong Wu ◽

Guangyang Lin ◽

...

Keyword(s):

Quantum Dots ◽

Room Temperature ◽

Controllable Synthesis ◽

Room Temperature Photoluminescence

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Room temperature photoluminescence of individual self-assembled quantum dots

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2007.10.028 ◽

2008 ◽

Vol 40 (5) ◽

pp. 1687-1689 ◽

Cited By ~ 2

Author(s):

A. Zora ◽

C. Simserides ◽

G.P. Triberis

Keyword(s):

Quantum Dots ◽

Room Temperature ◽

Room Temperature Photoluminescence ◽

Self Assembled ◽

Individual Self

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1.3 νm InAs/GaAs Quantum Dots Directly CappedWith GaAs Grown By Metal Organic Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-775-p9.51 ◽

2003 ◽

Vol 775 ◽

Author(s):

K.F. Huang ◽

T.P. Hsieh ◽

N.T. Yeh ◽

W.J. Ho ◽

J.I. Chyi ◽

...

Keyword(s):

Growth Rate ◽

Quantum Dots ◽

Chemical Vapor Deposition ◽

Growth Temperature ◽

Vapor Deposition ◽

Room Temperature ◽

Chemical Vapor ◽

Peak Wavelength ◽

Room Temperature Photoluminescence ◽

Periodic Growth

AbstractSystematic studies of the growth temperature and growth rate effect of the formation of InAs/GaAs quantum dots (QDs) have been demonstrated. These QDs are formed with large InAs coverage (3.0 MLs) and periodic growth interruption via Strnski-Krastonov (S-K) epitaxial growth mode by using metalorganic chemical vapor deposition (MOCVD). The room temperature photoluminescence (PL) spectra show red-shift of peak wavelength by decreasing the InAs growth temperature from 540°C to 500°C. As growth rate increases from 0.05 ML/s to 0.2 ML/s at growth temperature of 500°C, PL linewidth could be narrowed and emission intensity could be increased. These results could be correlated to the In clusters and uniformity of InAs/GaAs QDs observed by scanning electron microscopy (SEM) image. Finally, the room temperature photoluminescence spectra of InAs/GaAs QDs directly capped with GaAs shows peak wavelength of 1.35 μm with narrow linewidth of 30.8 meV is obtained.

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