Rapid Thermal Annealing Effects on the Electrical and Structural Properties of ITO Thin Films Deposited at Room Temperature

2013 ◽  
Vol 51 (9) ◽  
pp. 691-699
Author(s):  
Se-Young Choi ◽  
Sung Jin Kim ◽  
Kyoon Choi
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Ito Thin Films ◽  
Annealing Effects

Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Effects

Improved optical and structural properties of ZnO thin films by rapid thermal annealing

2007 ◽  
Vol 143 (4-5) ◽  
pp. 250-254 ◽  
Author(s):  
Yueh-Chien Lee ◽  
Sheng-Yao Hu ◽  
Walter Water ◽  
Ying-Sheng Huang ◽  
Min-De Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Zno Thin Films

Effect of rapid thermal annealing on electrical and optical properties of Ga doped ZnO thin films prepared at room temperature

2006 ◽  
Vol 100 (11) ◽  
pp. 113515 ◽  
Author(s):  
Jong Hoon Kim ◽  
Byung Du Ahn ◽  
Choong Hee Lee ◽  
Kyung Ah Jeon ◽  
Hong Seong Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Electrical And Optical Properties ◽  
Doped Zno

scholarly journals Effects of rapid thermal annealing on the properties of room-temperature oxygenated DC sputtered zinc thin films for CZTS solar cells application

2021 ◽  
Vol 47 (2) ◽  
pp. 637-647
Author(s):  
Emmanuel R Ollotu ◽  
Nuru R Mlyuka ◽  
Margaret E Samiji
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Near Infrared ◽  
Hall Effect Measurement ◽  
Window Layer ◽  
Zno Films

This work investigated the potential to achieve zinc oxide (ZnO) films for Cu2ZnSnS4 (CZTS) solar cells window layer at controlled annealing conditions as a potential approach to address elemental inter-diffusion in CZTS solar cells. This involved rapid thermal annealing (RTA) of room-temperature oxygenated DC sputtered zinc thin films in an ambient of nitrogen gas at different temperatures. Structural, morphological, optical, and electrical properties of these films were determined by X-ray diffractometer, Scanning Electron Microscopy, Ultraviolet-visible-near infrared spectrophotometer, and Hall Effect measurement, respectively. ZnO phases were observed after annealing the films over 150 °C. The films’ grains sizes improved with increasing RTA temperature. An exponential decrease in these films’ resistivity was observed with increasing RTA temperature attaining the lowest value at 300 °C. The bandgap and average solar transmittance of the films increased with increasing RTA temperature achieving values that are potential for applications in CZTS solar cells window layer at RTA temperatures beyond 200 °C. Keywords: Sputtering; Rapid thermal annealing; Zinc oxide; Structural; Opt-electrical

Influence of Rapid Thermal Annealing on Structural, Optical and Electrical Properties of ITO Thin Films

2016 ◽  
Vol 675-676 ◽  
pp. 249-252
Author(s):  
Wissawat Sakulsaknimitr ◽  
Worasitti Sriboon ◽  
Kanyakorn Teanchai ◽  
Mati Horprathum ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hall Effect Measurement ◽  
Electron Beam Evaporation ◽  
Optical And Electrical Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Thin Films

Indium doped tin oxide (ITO) thin films were deposited on silicon wafer (100) and glass slide by ion assisted electron beam evaporation deposition. After deposition, the ITO thin films were annealed in vacuum (100-300°C) and their structural, optical and electrical properties were systematically investigated. X-ray diffraction,atomic force microscopy, ultraviolet–visible (UV–vis) spectrophotometer and hall-effect measurement were employed to obtain information on the crystallization, transmission and resistivity the films.It was found that the rapid thermal annealing can improve the resistivity of ITO thin films which specializes for the transparent conductive layers.

FTIR and Raman study of rapid thermal annealing and oxidation effects on structural properties of silicon-rich Si x C 1-x thin films deposited by R.F co-sputtering

2017 ◽  
Vol 89 ◽  
pp. 44-48 ◽  
Author(s):  
Abdel-ilah El khalfi ◽  
Elmaati Ech-chamikh ◽  
Youssef Ijdiyaou ◽  
Mustapha Azizan ◽  
Abdelhadi Essafti ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Raman Study
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