The Total-Reflection X-Ray Fluorescence Yield Formed by a Waveguide Resonator under Conditions of Ion Beam Excitation

2019 ◽  
Vol 62 (5) ◽  
pp. 659-663
Author(s):  
M. S. Afanasiev ◽  
V. K. Egorov ◽  
E. V. Egorov ◽  
N. F. Kuharskaya ◽  
A. E. Nabiev ◽  
...  
2006 ◽  
Vol 21 (1) ◽  
pp. 147-152 ◽  
Author(s):  
X.T. Zhou ◽  
T.K. Sham ◽  
C.Y. Chan ◽  
W.J. Zhang ◽  
I. Bello ◽  
...  

Two cubic boron nitride (c-BN) thin films (thickness, 80 nm), which were grown on silicon by mass-selected ion beam deposition and thin diamond film-coated silicon by magnetron sputtering technique respectively, were investigated by x-ray absorption near-edge spectroscopy (XANES) at the B K-edge. The angular dependences of the XANES recorded in fluorescence yield (FY) were used to show that the preferable orientation of the sp2-bonded turbostratic BN (t-BN) basal planes at the interfacial layers between the top c-BN film and Si substrate is normal or nearly normal to the substrate, which is consistent with previous transmission electron microscope analysis. The angular dependence was also used to show that the film deposited on diamond-coated Si has a higher relative amount of ordered t-BN at its film-substrate interface than the film on Si substrate. This work that shows a technique to determine the thin film structure, especially the interfacial structure between the thin films and their substrates x-ray absorption fine structure is a powerful mode.


Author(s):  
A.J. Tousimis

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.


Author(s):  
Werner P. Rehbach ◽  
Peter Karduck

In the EPMA of soft x rays anomalies in the background are found for several elements. In the literature extremely high backgrounds in the region of the OKα line are reported for C, Al, Si, Mo, and Zr. We found the same effect also for Boron (Fig. 1). For small glancing angles θ, the background measured using a LdSte crystal is significantly higher for B compared with BN and C, although the latter are of higher atomic number. It would be expected, that , characteristic radiation missing, the background IB (bremsstrahlung) is proportional Zn by variation of the atomic number of the target material. According to Kramers n has the value of unity, whereas Rao-Sahib and Wittry proposed values between 1.12 and 1.38 , depending on Z, E and Eo. In all cases IB should increase with increasing atomic number Z. The measured values are in discrepancy with the expected ones.


2003 ◽  
Vol 107 ◽  
pp. 203-206 ◽  
Author(s):  
M. Bounakhla ◽  
A. Doukkali ◽  
K. Lalaoui ◽  
H. Aguenaou ◽  
N. Mokhtar ◽  
...  
Keyword(s):  

Author(s):  
T. Yaguchi ◽  
M. Konno ◽  
T. Kamino ◽  
M. Ogasawara ◽  
K. Kaji ◽  
...  

Abstract A technique for preparation of a pillar shaped sample and its multi-directional observation of the sample using a focused ion beam (FIB) / scanning transmission electron microscopy (STEM) system has been developed. The system employs an FIB/STEM compatible sample rotation holder with a specially designed rotation mechanism, which allows the sample to be rotated 360 degrees [1-3]. This technique was used for the three dimensional (3D) elemental mapping of a contact plug of a Si device in 90 nm technology. A specimen containing a contact plug was shaped to a pillar sample with a cross section of 200 nm x 200 nm and a 5 um length. Elemental analysis was performed with a 200 kV HD-2300 STEM equipped with the EDAX genesis Energy dispersive X-ray spectroscopy (EDX) system. Spectrum imaging combined with multivariate statistical analysis (MSA) [4, 5] was used to enhance the weak X-ray signals of the doped area, which contain a low concentration of As-K. The distributions of elements, especially the dopant As, were successfully enhanced by MSA. The elemental maps were .. reconstructed from the maps.


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