Depth profiling of Co/Ti – silicide films using total reflection X-ray fluorescence (TXRF) spectrometry combined with low energy ion beam etching (IBE) for sample preparation

1998 ◽  
Vol 361 (6-7) ◽  
pp. 625-627 ◽  
Author(s):  
W. Frank ◽  
A. Schindler ◽  
H.-J. Thomas
Keyword(s):  
Sample Preparation ◽  
Ion Beam ◽  
Depth Profiling ◽  
Total Reflection ◽  
Low Energy ◽  
Ion Beam Etching ◽  
X Ray

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Concentration‐depth profiling using total‐reflection x‐ray fluorescence spectrometry in combination with ion‐beam microsectioning techniques

1995 ◽  
Vol 66 (1) ◽  
pp. 20-23 ◽  
Author(s):  
G. Wiener ◽  
C. Michaelsen ◽  
J. Knoth ◽  
H. Schwenke ◽  
R. Bormann
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Total Reflection ◽  
Fluorescence Spectrometry ◽  
X Ray

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

Surface Morphological Changes of Polyimide with Oxygen Reactive Ion Beam Etching (RIBE)

1988 ◽  
Vol 129 ◽  
Author(s):  
Kyung W. Paik ◽  
Arthur L. Ruoff
Keyword(s):  
Morphological Changes ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ion Beam Etching ◽  
X Ray ◽  
Disordered Phase ◽  
Beam Incidence ◽  
Yield Difference ◽  
Sectional Plane

ABSTRACTAt the beginning of etching, surface asperities appeared on the top plane of the polyimide (PI) film. The formation of surface asperities is due to the ordered phase in PI film. The known dimension of the ordered phase measured by X-ray diffraction is consistant with the size of surface asperities, 100 Å, observed by TEM. Further ion doses made these asperties evolve into smooth bumps which then eroded into cones as a result of etch yield difference as a function of the angle of beam incidence Y(θ)/Y(0) which has a maximum at θ=70. Finally cones led to the development of grass-likestructure on the top plane of the PI film. The formation of platelike structure on the cross-sectional plane of PI indicates that the structural inhomogeniety of the PI film(the ordered and disordered phase) is the main cause for the surface morphological changes of PI.

A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching

1983 ◽  
Vol 22 (Part 2, No. 4) ◽  
pp. L219-L220 ◽  
Author(s):  
Hiroaki Aritome ◽  
Toshiya Yamato ◽  
Shinji Matsui ◽  
Susumu Namba
Keyword(s):  
Ion Beam ◽  
Two Stage ◽  
Ion Beam Etching ◽  
X Ray ◽  
Reactive Ion Beam Etching
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