scholarly journals Influence of Dimensional Effects on the Curie Temperature of Dy and Ho Thin Films

2021 ◽  
Vol 122 (5) ◽  
pp. 465-471
Author(s):  
D. I. Devyaterikov ◽  
V. V. Proglyado ◽  
V. D. Zhaketov ◽  
Yu. V. Nikitenko ◽  
O. A. Kondrat’ev ◽  
...  
2021 ◽  
Vol 122 (8) ◽  
pp. 826-826
Author(s):  
D. I. Devyaterikov ◽  
V. V. Proglyado ◽  
V. D. Zhaketov ◽  
Yu. V. Nikitenko ◽  
O. A. Kondrat’ev ◽  
...  

1991 ◽  
Vol 243 ◽  
Author(s):  
Jhing–Fang Chang ◽  
Chi Kong Kwok ◽  
Seshu B. Desu

AbstractBoth La and Nd–doped PZT, i.e., PLZT and PNZT, ferroelectric thin films were prepared by the metalorganic deposition (MOD) process. The precursor solutions used were derived from lead acetate, lanthanum acetylacetonate, neodymium acetate, zirconium n–propoxide, and titanium iso–propoxide. The dopant concentration of the films analyzed by electron microprobe indicated a one–to–one correspondence between film composition and the composition of the precursor from which the film was made. In this study, the effects of Nd and La dopants in PZT films on Curie temperature was determined by in–situ hot–stage TEM and compared with those of bulk materials. Lattice parameter and phase transformation were determined by both X–ray and electron diffraction. Our observations were: (1) Curie temperature decreases with increasing dopant concentration for both thin foils and bulk ceramics, (2) for a given dopant concentration, Curie temperature and crystal tetragonality of PNZT thin foils is lower than those of PLZT samples, (3) Curie temperature of thin foils was found to be less than those of the corresponding bulk materials, and (4) ferroelectric domains is easily observed in both PLZT and PNZT TEM specimens prepared by the spin–coating method.


2007 ◽  
Vol 144 (1-3) ◽  
pp. 93-96 ◽  
Author(s):  
S. Brivio ◽  
M. Cantoni ◽  
D. Petti ◽  
A. Cattoni ◽  
R. Bertacco ◽  
...  
Keyword(s):  

1993 ◽  
Vol 321 ◽  
Author(s):  
Chianping Ye ◽  
Paul Baude ◽  
Dennis L. Polla

ABSTRACTThin LiTaO3 films were prepared by spin coating of polymerized sol-gel precursor solution. Films have been deposited on single crystal silicon substrate, Ti/Pt or SiO2 coated silicon substrate. Films were characterized by x-ray diffraction, dielectric and pyroelectric Measurements. High Curie temperature (above 550 °C) was assumed for LiTaO3 thin films from the temperature dependence of dielectric constant. Replacing 35% of tantalum by titanium atoms in the LiTaO3 precursor solution has resulted the thin films with Curie temperature of 330 °C. The lower Curie temperature leads to the larger pyroelectric coefficient at room-temperature, which is more than double that of the undoped LiTaO3 thin films. The dielectric, pyroelectric, and ferroelectric properties have been compared to the single crystal LiTaO3 and ceramic Li0.91Ta0.73Ti0.36O3. LiTaO3 thin films are available by sol-gel process at low temperature, and their properties may possibly be controlled by varying the composition of the sol-gel precursor solution.


1973 ◽  
Vol 13 (7) ◽  
pp. 785-788 ◽  
Author(s):  
C. Llinares ◽  
C. Duchemin ◽  
G. Bordure
Keyword(s):  

2005 ◽  
Vol 71 (9) ◽  
Author(s):  
Dirk Fuchs ◽  
Thorsten Schwarz ◽  
Oswaldo Morán ◽  
Peter Schweiss ◽  
Rudolf Schneider

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