Interaction between mobile dislocations and perfect dislocation loops in Fe-Ni-Cr austenitic alloy systems

Author(s):  
A. V. Bakaev ◽  
D. A. Terentyev ◽  
P. Yu. Grigor’ev ◽  
E. E. Zhurkin
Author(s):  
J.A. Lambert ◽  
P.S. Dobson

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.


2000 ◽  
Vol 610 ◽  
Author(s):  
G. Subramanian ◽  
K.S. Jones ◽  
M.E. Law ◽  
M.J. Caturla ◽  
S. Theiss ◽  
...  

Abstract{311) defects and dislocation loops are formed after ion-implantation and annealing of a silicon wafer. Recent Transmission Electron Microscopy studies by Li and Jones have shown that sub-threshold dislocation loops nucleate from {311} defects. In our study, the conjugate gradient method with the Stillinger Weber potential is used to relax different configurations such as {311} defects with a maximum of five chains and perfect dislocation loops. From the formation energies thus obtained we find that there is an optimal width for each length of the {311} defects. Moreover the relative stability of {311}s and loops is studied as a function of defect size. We observe that at very small sizes the perfect loops are more stable than the {311}s. This may provide an explanation for the experimental observation by Robertson et al that, in an annealing study of end of range damage of amorphized samples, 45% of the loops had nucleated in the first 10 minutes of anneal. Out of these 25% of the loops could not have nucleated by unfaulting of {311}s. We propose that homogeneous nucleation, as against unfaulting of the {311}s, could be the source of these sub-microscopic loops.


1982 ◽  
Vol 37 (7) ◽  
pp. 633-637
Author(s):  
M. Umeno ◽  
H. Kawabe ◽  
T. Kokonoi

Abstract Dislocation structures in S-and N-doped homoepitaxial layers on GaP wafers are studied by high voltage electron microscopy. Many dislocations are introduced in the epilayer, even if the substrate is nearly dislocation free. The origins of the dislocations in this case are the microdefects, especially the perfect dislocation loops in the substrate. Dislocation dipoles are induced by dis-location half loops appearing at the epi-substrate interface and are classified into three types, two of which are concerned with the interactions of two dipoles in the epilayer, each interaction yielding a screw dislocation segment. The third type of dipole does not extend into the epilayer so far, but terminates and forms an elongated dislocation loop. The interactions and the terminations of dipoles decrease the density of the induced dislocations in proportion to the distances from the interface. The screw dislocations generated by the dipole interactions relax the torsional lattice distortion of the epilayer caused by dopant materials.


Materia Japan ◽  
2005 ◽  
Vol 44 (12) ◽  
pp. 984-984
Author(s):  
Kazuto Arakawa ◽  
Makoto Hatanaka ◽  
Eiichi Kuramoto ◽  
Kotaro Ono ◽  
Hirotaro Mori

Author(s):  
H. Yamaguchi ◽  
H. Kawamoto ◽  
S. Yoshida

The motion of a perfect dislocation loop during annealing was examined by several workers. They proposed a mechanism of pipe diffusion and analyzed this motion. However, these studies on pipe diffusion may have some errors caused by the prismatic glide. In this paper we studied on the motion of faulted dislocation loops under the mutual interaction and estimated the activation energy for pipe diffusion along the dislocation segment of faulted loops.Figure 1 shows schematically a pair of regular hexagonal faulted dislocation loops lying on the (111) plane in quenched aluminum as well as their images observed with an electron microscope, where (a) is the one taken from [001] direction before annealing, (b) and (c) are those taken from [001] and [011] directions after annealing at 95°C for 2 hours, respectively. In order to determine the vector S which connects the center of loop 1 and that of loop 2 in Fig. 1, three different coordinate systems (X1, Y1, Z1), (X2, Y2, Z2), (X3, Y3, Z3) are set up on a specimen, an electron microscope and a micrograph, respectively,(Fig. 2).


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