Lattice parameter of a crystal containing large perfect dislocation loops

1973 ◽  
Vol 44 (8) ◽  
pp. 3782-3783 ◽  
Author(s):  
P. M. Kelly
Author(s):  
J.A. Lambert ◽  
P.S. Dobson

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.


2000 ◽  
Vol 650 ◽  
Author(s):  
J. Rest ◽  
G. L. Hofman

ABSTRACTWe developed a rate-theory-based model to investigate the nucleation and growth of interstitial loops and cavities during low-temperature in-reactor irradiation of uranium-molybdenum alloys. Consolidation of the dislocation structure takes into account the generation of forest dislocations and capture of interstitial dislocation loops. The theoretical description includes stress-induced glide of dislocation loops and accumulation of dislocations on cell walls. The loops accumulate and ultimately evolve into a low-energy cellular dislocation structure. Calculations indicate that nanometer-size bubbles are associated with the walls of the cellular dislocation structure. The accumulation of interstitial loops within the cells and of dislocations on the cell walls leads to increasing values for the rotation (misfit) of the cell wall into a subgrain boundary and a change in the lattice parameter as a function of dose. Subsequently, increasing values for the stored energy in the material are shown to be sufficient for the material to undergo recrystallization. Results of the calculations are compared with SEM photomicrographs of irradiated U- 10Mo, as well as with data from irradiated UO2.


Author(s):  
N. D. Evans ◽  
S. J. Zinkle ◽  
J. Bentley ◽  
E. A. Kenik

Magnesium aluminate spinel (MgAl2O4) is being considered as an insulator material within fusion reactors because of its favorable damage characteristics. The microstructure of material implanted at 650°C with 2 MeV Al+ ions is shown in cross-section in Fig. 1. Little damage occurs near the surface, whereas at greater depths (0.5 - 1.0 μm) dislocation loops are formed on {110} and {111} planes. Small features thought to be metallic aluminum colloids were observed in the implanted volume near end-of-range. Phase identification by electron diffraction is complicated because the lattice parameter of spinel (0.8083 nm) is almost exactly twice that of aluminum (0.4049 nm). However, the spinel <222> reflection is weak but the aluminum <111> reflection is intense. In <222>sp<111>Al dark-field images of the implanted volume near end-of-range (Fig. 2) the bright 5-10nm diameter features were presumed to be metallic aluminum colloids.


Author(s):  
N. D. Evans ◽  
S. J. Zinkle

Because magnesium aluminate spinel (MgAl2O4) shows a strong resistance to void swelling during neutron irradiation at elevated temperatures, it is a candidate material for specialized applications in proposed fusion reactors. During implantation at 25°C with 2 MeV Mg+ ions to ∼2.8 × 1021 Mg+/m2, dislocation loops are formed at midrange depths (∼0.5 - 1.0 μm) on {110} and {111}. The microstructurc in the implanted ion region (∼1.5 - 2.0 μm) is shown in cross-section in Fig. 1. Within this implanted ion region, small features (4 - 10 nm diam.) were observed in dark field (DF) images using a spinel 222 reflection (Fig. 2). No evidence was found in electron diffraction patterns to suggest these features are (hexagonal) metallic Mg. However, in an earlier study, similar features in Al+ implanted spinel were identified by parallel electron energy loss spectrometry (PEELS) as metallic Al colloids. Phase identification of metallic Al within this spinel by electron diffraction is complicated because the lattice parameter of spinel (0.8083 nm) is almost exactly twice that of aluminum (0.4049 nm) and the phases are oriented cube-on-cube.


2000 ◽  
Vol 610 ◽  
Author(s):  
G. Subramanian ◽  
K.S. Jones ◽  
M.E. Law ◽  
M.J. Caturla ◽  
S. Theiss ◽  
...  

Abstract{311) defects and dislocation loops are formed after ion-implantation and annealing of a silicon wafer. Recent Transmission Electron Microscopy studies by Li and Jones have shown that sub-threshold dislocation loops nucleate from {311} defects. In our study, the conjugate gradient method with the Stillinger Weber potential is used to relax different configurations such as {311} defects with a maximum of five chains and perfect dislocation loops. From the formation energies thus obtained we find that there is an optimal width for each length of the {311} defects. Moreover the relative stability of {311}s and loops is studied as a function of defect size. We observe that at very small sizes the perfect loops are more stable than the {311}s. This may provide an explanation for the experimental observation by Robertson et al that, in an annealing study of end of range damage of amorphized samples, 45% of the loops had nucleated in the first 10 minutes of anneal. Out of these 25% of the loops could not have nucleated by unfaulting of {311}s. We propose that homogeneous nucleation, as against unfaulting of the {311}s, could be the source of these sub-microscopic loops.


1983 ◽  
Vol 48 (1) ◽  
pp. 95-107 ◽  
Author(s):  
J. R. Willis ◽  
R. Bitllough ◽  
A. M. Stoneham

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