Experimental and Theoretical Study of the Propagation of Proton Beams under the Action of Laser Radiation with Allowance for Magnetic Reconnection

2021 ◽  
Vol 133 (4) ◽  
pp. 396-403
Author(s):  
V. S. Belyaev ◽  
B. V. Zagreev ◽  
A. Yu. Kedrov ◽  
A. G. Kol’chugin ◽  
V. P. Krainov ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Magnetic Reconnection ◽  
Theoretical Study ◽  
Proton Beams

A method of polarizing relativistic proton beams by laser radiation

1984 ◽  
Vol 227 (3) ◽  
pp. 429-433 ◽  
Author(s):  
A.N. Zelenskiy ◽  
S.A. Kokhanovskiy ◽  
V.M. Lobashev ◽  
N.M. Sobolevskiy ◽  
E.A. Volferts
Keyword(s):  
Laser Radiation ◽  
Proton Beams ◽  
Relativistic Proton

Theoretical Study of Ge Implanted Silicon Subjected to Pulsed Excimer (XeCl) Laser Radiation

1996 ◽  
Vol 31 (7) ◽  
pp. 847-850 ◽  
Author(s):  
D. Klinger ◽  
J. Auleytner ◽  
D. ??ymierska
Keyword(s):  
Laser Radiation ◽  
Theoretical Study ◽  
Xecl Laser

Theoretical study of the kinetics of austenitization in steels with heating by continuous laser radiation

1987 ◽  
Vol 52 (3) ◽  
pp. 325-329
Author(s):  
E. I. Kim ◽  
A. G. Grigoryants ◽  
A. N. Safonov ◽  
Ya. A. Krasnov ◽  
R. N. Kantaeva
Keyword(s):  
Laser Radiation ◽  
Theoretical Study ◽  
Continuous Laser ◽  
Kinetics Of

scholarly journals BINDING ENERGIES OF HYDROGEN-LIKE IMPURITIES IN A SEMICONDUCTOR IN INTENSE TERAHERTZ LASER FIELDS

2003 ◽  
Vol 17 (12) ◽  
pp. 2487-2496 ◽  
Author(s):  
J. L. NIE ◽  
W. XU ◽  
L. B. LIN
Keyword(s):  
Laser Radiation ◽  
Binding Energy ◽  
Radiation Intensity ◽  
Theoretical Study ◽  
Numerical Results ◽  
Binding Energies ◽  
Thz Radiation ◽  
Radiation Frequency ◽  
Impurities In Semiconductors ◽  
Linearly Polarized

We present a detailed theoretical study of the influence of linearly polarized intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for ground (1s) and first excited (2s) states, E1s and E2s, on the intensity and the frequency of the THz radiation has been examined for a GaAs-based system. It is found that E1s, E2s and E2s-E1s decrease with increasing radiation intensity or with decreasing radiation frequency, which implies that an intense THz field can enhance ionization of dopants in semiconductors. Our analytical and numerical results show that one of the most important results obtained by A. L. A. Fonseca et al. [Phys. Stat. Sol. (b)186, K57 (1994)] is incorrect.

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