Special features of the mechanism of defect formation in CdS single crystals subjected to irradiation with high doses of fast reactor neutrons

2009 ◽  
Vol 43 (11) ◽  
pp. 1401-1406 ◽  
Author(s):  
H. Ye. Davydyuk ◽  
A. H. Kevshyn ◽  
V. V. Bozhko ◽  
V. V. Halyan
Keyword(s):  
Single Crystals ◽  
Fast Reactor ◽  
Defect Formation ◽  
Mechanism Of Defect Formation ◽  
High Doses

Radiation defect formation in lithium tetraborate (LTB) single crystals

1994 ◽  
Vol 132 (4) ◽  
pp. 371-376 ◽  
Author(s):  
A. O. Matkovskii ◽  
D. Yu. Sugak ◽  
Ya. V. Burak ◽  
G. I. Malovichko ◽  
V. G. Grachov
Keyword(s):  
Single Crystals ◽  
Radiation Defect ◽  
Defect Formation ◽  
Lithium Tetraborate

scholarly journals Intensive evaluation of radiation stability of phlogopite single crystals under high doses of γ-ray irradiation

RSC Advances ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 6199-6210 ◽  
Author(s):  
Honglong Wang ◽  
Yaping Sun ◽  
Jian Chu ◽  
Xu Wang ◽  
Ming Zhang
Keyword(s):  
Single Crystals ◽  
Radiation Stability ◽  
Lattice Plane ◽  
Radiolysis Products ◽  
Γ Ray ◽  
High Doses

Upon irradiation, the framework underwent breakage, H2O underwent radiolysis, and the radiolysis products reacted with the framework, expanding the lattice plane.

Mechanism of Defect Formation Process in Electron-Irradiated Pb1?xSnxSe Alloys with Inverse Band Structure

1998 ◽  
Vol 210 (2) ◽  
pp. 797-800
Author(s):  
E.P. Skipetrov ◽  
E.A. Zvereva ◽  
B.B. Kovalev ◽  
A.M.. Mousalitin ◽  
L.A. Skipetrova
Keyword(s):  
Band Structure ◽  
Formation Process ◽  
Defect Formation ◽  
Mechanism Of Defect Formation

Defect formation in diamond single crystals grown from the Fe-Ni-C system at high temperature and high pressure

2001 ◽  
Vol 36 (13-14) ◽  
pp. 2283-2288 ◽  
Author(s):  
Long-Wei Yin ◽  
Mu-Sen Li ◽  
Feng-Zhao Li ◽  
Dong-Sheng Sun ◽  
Zhao-Yin Hao
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystals ◽  
Defect Formation ◽  
Diamond Single Crystals

scholarly journals Influence of growth impurities on thermal defect formation in monocrystalline silicon

2021 ◽  
Vol 22 (3) ◽  
pp. 437-443
Author(s):  
Yu.V. Pavlovskyy ◽  
O.V. Berbets ◽  
P.G. Lytovchenko
Keyword(s):  
Heat Treatment ◽  
Magnetic Susceptibility ◽  
Single Crystals ◽  
Structural Properties ◽  
Defect Formation ◽  
Experimental Results ◽  
Defects In Crystals ◽  
Structural Defects ◽  
Annealing Temperatures ◽  
Thermal Defect

The influence of growth impurities (oxygen and carbon) on the thermalsdefect formation in silicon single crystals has been studied. Annealing was carried out in the temperature range 700-1100°C in steps of 50°C for 5 hours at each temperature. The magnetic, micromechanical and structural properties of annealed silicon single crystals have been experimentally studied. The distribution of defects formed at different annealing temperatures has been studied. The correlation between changes of magnetic susceptibility, microhardness and rearrangement of structural defects in crystals after their heat treatment is revealed. Concentrations and sizes of magnetically ordered clusters are estimated. Interpretation of the obtained experimental results is offered.

Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

2019 ◽  
Vol 82 (11) ◽  
pp. 1571-1575
Author(s):  
R. Sh. Ramakoti ◽  
O. B. Anan’in ◽  
A. P. Melekhov ◽  
I. A. Gerasimov ◽  
G. S. Bogdanov ◽  
...  
Keyword(s):  
Defect Formation ◽  
X Rays ◽  
Mechanism Of Defect Formation

On the Role of Solvent in the Formation of Vacancies on Ibuprofen Crystal Facets

2021 ◽  
Author(s):  
Veselina Marinova ◽  
Geoffrey P. F. Wood ◽  
Ivan Marziano ◽  
Matteo Salvalaglio
Keyword(s):  
Surface Defects ◽  
Defect Formation ◽  
Energetic Cost ◽  
Crystal Facet ◽  
Mechanism Of Defect Formation ◽  
Surface Vacancy ◽  
Racemic Ibuprofen ◽  
Dynamics Simulations ◽  
Role Of Solvent

Surface defects play a crucial role in the process of crystal growth, as the incorporation of growth units generally takes place on under-coordinated sites on the growing crystal facet. In this work, we use molecular dynamics simulations to obtain information on the role of the solvent in the roughening of three morphologically-relevant crystal faces of form I of racemic ibuprofen. To this aim, we devise a computational strategy based on combining independent Well Tempered Metadynamics with Mean Force Integration. This approach enables us to evaluate the energetic cost associated with the formation of a surface vacancy for a set of ten solvents, covering a range of polarities and hydrogen-bonding ability. We find that both the mechanism of defect formation on these facets and the work associated with the process are indeed markedly solvent-dependent. The methodology developed in this work has been designed with the aim of capturing solvent effects at the atomistic scale while maintaining the computational efficiency necessary for implementation in high-throughput computational screenings of crystallization solvents.

Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2415-2418 ◽  
Author(s):  
Ichiro Mizushima ◽  
Mitsuo Koike ◽  
Tsutomu Sato ◽  
Kiyotaka Miyano ◽  
Yoshitaka Tsunashima
Keyword(s):  
Low Temperature ◽  
Defect Formation ◽  
Si Substrate ◽  
Low Temperature Si Epitaxy ◽  
Mechanism Of Defect Formation ◽  
Si Epitaxy
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