Defects observed by electron microscopy in gold bombarded with keV gold ions II. Mechanism of defect formation

1969 ◽  
Vol 1 (4) ◽  
pp. 269-278 ◽  
Author(s):  
L. E. Thomas ◽  
T. Schober ◽  
R. W. Balluffi
Keyword(s):  
Electron Microscopy ◽  
Defect Formation ◽  
Mechanism Of Defect Formation

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

2008 ◽  
Vol 600-603 ◽  
pp. 267-272 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Masahiro Nagano
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Formation ◽  
Grazing Incidence ◽  
Microscopic Structure ◽  
Threading Dislocation ◽  
Simultaneous Generation ◽  
Burgers Vector ◽  
X Ray ◽  
Transmission Electron

Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazing incidence synchrotron reflection X-ray topography and transmission electron microscopy. Frank-type faults, which are terminated by four Frank partials with a 1/4[0001] type Burgers vector with the same sign on four different basal planes, are confirmed to be formed by conversion of a 1c threading edge dislocation (TSD) in the substrate as well as simultaneous generation of a 1c TSD during epitaxy. The collation between the topography appearance and the microscopic structure and the variety of Frank faults are shown. Formation of carrot defects and threading dislocation clusters are also investigated.

Preparation and Characterisation of TiO2 Thick Films Fabricated by Electrophoretic Deposition

2007 ◽  
Vol 561-565 ◽  
pp. 2163-2166 ◽  
Author(s):  
H.Z. Abdullah ◽  
Charles C. Sorrell
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Grain Growth ◽  
Electrophoretic Deposition ◽  
Defect Formation ◽  
Titanium Foil ◽  
X Ray Diffraction ◽  
Voltage Range ◽  
X Ray ◽  
Scanning Electron

Rutile nano-powders were suspended in a solution of acetylacetone and iodine. The suspensions were electrophoretically deposited on titanium foil at a voltage range of 5-30 V over times of 5-120 s. The dried tapes then were sintered at 800°C for 2 h in flowing argon. Both the green and fired tapes were examined by field emission scanning electron microscopy, optical microscopy, X-ray diffraction, and Raman microspectroscopy. The thickness of the films depended on the voltage and the time of deposition. The sintered microstructures depended significantly on the thickness of the film, which was a function the proximity to the Ti/TiO2 interface. The interface is critical to the microstructure because it acts as the source of defect formation, which enhances sintering, grain growth, and grain facetting.

Mechanism of Defect Formation Process in Electron-Irradiated Pb1?xSnxSe Alloys with Inverse Band Structure

1998 ◽  
Vol 210 (2) ◽  
pp. 797-800
Author(s):  
E.P. Skipetrov ◽  
E.A. Zvereva ◽  
B.B. Kovalev ◽  
A.M.. Mousalitin ◽  
L.A. Skipetrova
Keyword(s):  
Band Structure ◽  
Formation Process ◽  
Defect Formation ◽  
Mechanism Of Defect Formation

Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

2019 ◽  
Vol 82 (11) ◽  
pp. 1571-1575
Author(s):  
R. Sh. Ramakoti ◽  
O. B. Anan’in ◽  
A. P. Melekhov ◽  
I. A. Gerasimov ◽  
G. S. Bogdanov ◽  
...  
Keyword(s):  
Defect Formation ◽  
X Rays ◽  
Mechanism Of Defect Formation

On the Role of Solvent in the Formation of Vacancies on Ibuprofen Crystal Facets

2021 ◽  
Author(s):  
Veselina Marinova ◽  
Geoffrey P. F. Wood ◽  
Ivan Marziano ◽  
Matteo Salvalaglio
Keyword(s):  
Surface Defects ◽  
Defect Formation ◽  
Energetic Cost ◽  
Crystal Facet ◽  
Mechanism Of Defect Formation ◽  
Surface Vacancy ◽  
Racemic Ibuprofen ◽  
Dynamics Simulations ◽  
Role Of Solvent

Surface defects play a crucial role in the process of crystal growth, as the incorporation of growth units generally takes place on under-coordinated sites on the growing crystal facet. In this work, we use molecular dynamics simulations to obtain information on the role of the solvent in the roughening of three morphologically-relevant crystal faces of form I of racemic ibuprofen. To this aim, we devise a computational strategy based on combining independent Well Tempered Metadynamics with Mean Force Integration. This approach enables us to evaluate the energetic cost associated with the formation of a surface vacancy for a set of ten solvents, covering a range of polarities and hydrogen-bonding ability. We find that both the mechanism of defect formation on these facets and the work associated with the process are indeed markedly solvent-dependent. The methodology developed in this work has been designed with the aim of capturing solvent effects at the atomistic scale while maintaining the computational efficiency necessary for implementation in high-throughput computational screenings of crystallization solvents.

Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2415-2418 ◽  
Author(s):  
Ichiro Mizushima ◽  
Mitsuo Koike ◽  
Tsutomu Sato ◽  
Kiyotaka Miyano ◽  
Yoshitaka Tsunashima
Keyword(s):  
Low Temperature ◽  
Defect Formation ◽  
Si Substrate ◽  
Low Temperature Si Epitaxy ◽  
Mechanism Of Defect Formation ◽  
Si Epitaxy
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