Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2415-2418 ◽  
Author(s):  
Ichiro Mizushima ◽  
Mitsuo Koike ◽  
Tsutomu Sato ◽  
Kiyotaka Miyano ◽  
Yoshitaka Tsunashima
Keyword(s):  
Low Temperature ◽  
Defect Formation ◽  
Si Substrate ◽  
Low Temperature Si Epitaxy ◽  
Mechanism Of Defect Formation ◽  
Si Epitaxy

Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition

1991 ◽  
Vol 30 (Part 1, No. 5) ◽  
pp. 893-896 ◽  
Author(s):  
Ying Jia ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Temperature Si Epitaxy ◽  
Si Epitaxy

Role of energetic flux in low temperature Si epitaxy on dihydride-terminated Si (001)

1998 ◽  
Vol 324 (1-2) ◽  
pp. 85-88 ◽  
Author(s):  
M.E Taylor ◽  
Harry A Atwater ◽  
M.V.Ramana Murty
Keyword(s):  
Low Temperature ◽  
Low Temperature Si Epitaxy ◽  
Si Epitaxy

New approach to low-temperature Si epitaxy by using hot wire cell method

2000 ◽  
Vol 209 (2-3) ◽  
pp. 335-338 ◽  
Author(s):  
Tatsuro Watahiki ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Low Temperature ◽  
Hot Wire ◽  
New Approach ◽  
Cell Method ◽  
Low Temperature Si Epitaxy ◽  
Si Epitaxy

Photochemical Effects for Low-Temperature Si Epitaxy

1986 ◽  
Author(s):  
T. Yamazaki ◽  
R. Sugino ◽  
T. Ito ◽  
H. Ishikawa
Keyword(s):  
Low Temperature ◽  
Low Temperature Si Epitaxy ◽  
Si Epitaxy
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