Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC

2016 ◽  
Vol 50 (7) ◽  
pp. 883-887 ◽  
Author(s):  
P. A. Ivanov ◽  
A. S. Potapov ◽  
T. P. Samsonova ◽  
I. V. Grekhov
Keyword(s):  
Field Dependence ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Hexagonal Axis

Electric-field dependence of electron drift velocity in 4H–SiC

2016 ◽  
Vol 123 ◽  
pp. 15-18 ◽  
Author(s):  
P.A. Ivanov ◽  
A.S. Potapov ◽  
T.P. Samsonova ◽  
I.V. Grekhov
Keyword(s):  
Electric Field ◽  
Field Dependence ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift ◽  
Electric Field Dependence

Electron drift velocity versus electric field in GaAs

1986 ◽  
Vol 29 (12) ◽  
pp. 1295-1296 ◽  
Author(s):  
Chian S. Chang ◽  
Harold R. Fetterman
Keyword(s):  
Electric Field ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Velocity Versus ◽  
Electron Drift

Electron Drift-Velocity Detector for Gas Chromatography.

1964 ◽  
Vol 36 (9) ◽  
pp. 1739-1744 ◽  
Author(s):  
V. N. Smith ◽  
J. F. Fidiam
Keyword(s):  
Gas Chromatography ◽  
Drift Velocity ◽  
Electron Drift Velocity ◽  
Electron Drift

scholarly journals Увеличение насыщенной скорости дрейфа электронов в pHEMT-гетероструктурах с донорно-акцепторным легированием

2018 ◽  
Vol 44 (6) ◽  
pp. 77
Author(s):  
Д.Ю. Протасов ◽  
Д.В. Гуляев ◽  
А.К. Бакаров ◽  
А.И. Торопов ◽  
Е.В. Ерофеев ◽  
...  
Keyword(s):  
Drift Velocity ◽  
High Electron Mobility Transistor ◽  
Real Space ◽  
Electron Drift Velocity ◽  
Hot Electrons ◽  
Electron Drift ◽  
High Electron ◽  
High Electron Mobility ◽  
Donor Acceptor ◽  
Real Space Transfer

AbstractField dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

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