On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films

2018 ◽  
Vol 52 (9) ◽  
pp. 1178-1187 ◽  
Author(s):  
V. A. Volodin ◽  
Zhang Rui ◽  
G. K. Krivyakin ◽  
A. Kh. Antonenko ◽  
M. Stoffel ◽  
...  
Author(s):  
Rupam Dutta ◽  
Sayantan Bhattacharya ◽  
Arghajit Pyne ◽  
Prasanta Kumar Datta ◽  
Nilmoni Sarkar

2005 ◽  
Vol 16 (6) ◽  
pp. 832-835 ◽  
Author(s):  
Xiying Ma ◽  
ZhiJun Yan ◽  
Baohe Yuan ◽  
Baojun Li

1997 ◽  
Vol 62 (1-3) ◽  
pp. 624-632 ◽  
Author(s):  
V.V. Volkov ◽  
J. Van Landuyt ◽  
K. Marushkin ◽  
R. Gijbels ◽  
C. Férauge ◽  
...  

2018 ◽  
Vol 225 ◽  
pp. 06006
Author(s):  
John Francis ◽  
Denie Sam Jawahar ◽  
Antony John Paul ◽  
M Lydia

The design of a 24/7 solar panel using artificial method of producing Infra-Red (IR) has been proposed in this paper. This arrangement ensures that the solar panel can produce energy even during night time. The major disadvantage of a solar panel is that it cannot be used during night time and when the panel is shaded. Our project aims to eliminate these disadvantages of solar panel. In this work, a Light Dependent Resistor (LDR) resistor is used to sense day or night conditions and the analog sensed value is sent to the PIC microcontroller. During night hours, only specified load will be on, so that the battery works without getting discharged fully even in the midnight. The IR Light Emitting Diodes (LEDs) that are used in night are placed in inner side of the shutter which is placed on top of the panel. The shutter is opened and closed using a motor which is controlled by using relay. The charge and discharge conditions of the battery are monitored by a Global System for Mobile Communications (GSM) module. The efficiency and economic analysis of the system has been presented.


2021 ◽  
Vol MA2021-01 (15) ◽  
pp. 718-718
Author(s):  
Tatsuya Kameyama ◽  
Hiroki Yamauchi ◽  
Toshiki Mizumaki ◽  
Hiroshi Yukawa ◽  
Yoshinobu Baba ◽  
...  

2009 ◽  
Vol 36 (4) ◽  
pp. 309 ◽  
Author(s):  
Haylie G. Newbold ◽  
Carolyn M. King

Infrared (wavelengths >750 nm) light-emitting equipment is commonly used worldwide to monitor nocturnal predator and prey behaviour. However, it is possible that the infrared (IR)-light wavelengths emitted from the equipment are so close to the spectral threshold of some key species that the light may be detected. An operant procedure was used to test whether five male ferrets (Mustela furo) could see an IR light with peak wavelengths of 870 and 920 nm. First, the ferrets were taught to press a lever under a lit white light for food reinforcement (overall mean response accuracy was 89%). Changing the properties (wavelength and intensity) of the light did not disrupt the ferrets’ abilities to perform the learned task. When the light was changed to IR (870 nm), four of five ferrets responded to the light at levels significantly higher than chance (mean = 68%, n = 4188, P < 0.01). When glare from a red trial-starting light was removed, two of the five ferrets (S3 and S4) showed strong evidence (response accuracies of 84% and 78%, respectively, P < 0.01) that they could see IR at 870 nm; however, S3 definitely could not see IR at 920 nm (n = 124, mean = 47%, P = 0.53). We conclude that at least some ferrets can see the light emitted from standard monitoring equipment that uses IR wavelengths of ~870 nm. To ensure nocturnal predator and prey behaviours are not altered by IR surveillance, field programs should use only high-wavelength IR diodes (at least 920 nm).


2011 ◽  
Vol 178-179 ◽  
pp. 61-66 ◽  
Author(s):  
Arturo Hernandez-Hernandez ◽  
Victor Tapio Rangel-Kuoppa ◽  
Thomas Plach ◽  
Francisco De Moure-Flores ◽  
Jose G. Quiñones-Galvan ◽  
...  

In this work we report the results of the synthesis, structural and optical characterization of SiO2/Ge/SiO2heterostructures by reactive RF sputtering. The SiO2films were grown by reactive sputtering employing a plasma mixture of oxygen and argon. The Ge layer was grown employing an Ar atmosphere. The samples were prepared on p-type Si (1 1 1) substrates by reactive sputtering. The effect of the partial pressure of oxygen on the electronic properties of the heterostructure is reported[1]. Structural characterization was carried out by grazing angle X-ray difraction. Surface roughness was quantified by atomic force microscopy. The presence of Ge nanocrystals (Ge-NCs) was evidenced by X-ray diffraction. The vibrational properties were studied by Raman spectroscopy. The Raman spectra showed modes associated to germanium indicating the formation of low dimensionality germanium particles embedded within a SiO2matrix. Photoluminescence emission is observed around ~1.7 eV and it is associated to the quantum confinement of carriers in Ge-NCs. Ohmic contacts were deposited using a van der Pauw geometry employing an a AuSb alloy for the contacts. Temperature dependent Hall (T-Hall) measurements were done between 35 K and 150 K, using the van der Pauw method. The results indicated low resistivity values that could be explained due to some variable range hopping conduction mechanism.


2012 ◽  
Vol 111 (4) ◽  
pp. 044327 ◽  
Author(s):  
A. Hernández-Hernández ◽  
V. T. Rangel-Kuoppa ◽  
Thomas Plach ◽  
F. De Moure-Flores ◽  
J. G. Quiñones-Galván ◽  
...  

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