The light-emitting properties of Ge nanocrystals grown by pulsed laser deposition

2005 ◽  
Vol 16 (6) ◽  
pp. 832-835 ◽  
Author(s):  
Xiying Ma ◽  
ZhiJun Yan ◽  
Baohe Yuan ◽  
Baojun Li
2014 ◽  
Vol 2 (21) ◽  
pp. 4112-4116 ◽  
Author(s):  
Wenliang Wang ◽  
Yunhao Lin ◽  
Weijia Yang ◽  
Zuolian Liu ◽  
Shizhong Zhiou ◽  
...  

High-quality nonpolar m-plane GaN-based light-emitting diode (LED) wafers have been deposited on LiGaO2(100) substrates by a combination of pulsed laser deposition and molecular beam epitaxy technologies.


2005 ◽  
Vol 125 (4) ◽  
pp. 373-378
Author(s):  
Tamiko Ohshima ◽  
Hiroharu Kawasaki ◽  
Yoshiaki Suda ◽  
Yoshihisa Yamaguchi ◽  
Tomoaki Ikegami ◽  
...  

2020 ◽  
Vol 8 (35) ◽  
pp. 12240-12246 ◽  
Author(s):  
Yu Huang ◽  
Xiaoyu Zhou ◽  
Lichun Zhang ◽  
Guochen Lin ◽  
Man Xu ◽  
...  

Heterojunction light-emitting diodes (LEDs) based on n-ZnO/CsPbBr3/p-GaN have been fabricated by using pulsed laser deposition (PLD).


2005 ◽  
Vol 80 (5) ◽  
pp. 1109-1112 ◽  
Author(s):  
J.M. Fitz-Gerald ◽  
G. Jennings ◽  
R. Johnson ◽  
C.L. Fraser

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