Parameters of ZnO Semiconductor Films Doped with Mn and Fe 3d Impurities

The center plane inside a bending material has no strain, which is known as neutral mechanical plane. Based on this concept, herein, we achieve ultra-flexible semiconductor films based photodetectors at...

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Surface Etching of Polymeric Semiconductor Films Improves Environmental Stability of Transistors

Chemistry of Materials ◽

10.1021/acs.chemmater.1c00628 ◽

2021 ◽

Author(s):

Chenyang Zhai ◽

Xiaohui Yang ◽

Songyu Han ◽

Guanghao Lu ◽

Peng Wei ◽

...

Keyword(s):

Environmental Stability ◽

Semiconductor Films ◽

Surface Etching ◽

Polymeric Semiconductor

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Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽

10.3390/electronics10141629 ◽

2021 ◽

Vol 10 (14) ◽

pp. 1629

Author(s):

Hyeon-Joong Kim ◽

Do-Won Kim ◽

Won-Yong Lee ◽

Sin-Hyung Lee ◽

Jin-Hyuk Bae ◽

...

Keyword(s):

Thin Film ◽

Oxygen Vacancy ◽

Thin Film Transistors ◽

Sol Gel ◽

Sno2 Thin Film ◽

Negative Bias ◽

Semiconductor Films ◽

Saturation Regime ◽

Si Substrates ◽

Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

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On the Effects of Doping on the Catalytic Performance of (La,Sr)CoO3. A DFT Study of CO Oxidation

Catalysts ◽

10.3390/catal9040312 ◽

2019 ◽

Vol 9 (4) ◽

pp. 312 ◽

Cited By ~ 2

Author(s):

Antonella Glisenti ◽

Andrea Vittadini

Keyword(s):

Catalytic Activity ◽

Co Oxidation ◽

Density Functional Calculations ◽

Density Functional ◽

Formation Energy ◽

Oxygen Vacancies ◽

Catalytic Performance ◽

Energy Profiles ◽

High Concentrations ◽

3D Impurities

The effects of modifying the composition of LaCoO3 on the catalytic activity are predicted by density functional calculations. Partially replacing La by Sr ions has benefical effects, causing a lowering of the formation energy of O vacancies. In contrast to that, doping at the Co site is less effective, as only 3d impurities heavier than Co are able to stabilize vacancies at high concentrations. The comparison of the energy profiles for CO oxidation of undoped and of Ni-, Cu-m and Zn-doped (La,Sr)CoO3(100) surface shows that Cu is most effective. However, the effects are less spectacular than in the SrTiO3 case, due to the different energetics for the formation of oxygen vacancies in the two hosts.

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