Analysis and Measurement of Capacitance Characteristics of a Novel Light-Controlled Dual-Directional Gate Silicon-Controlled Rectifier

2021 ◽  
Vol 55 (2) ◽  
pp. 262-271
Author(s):  
F. Yan ◽  
Y. Wang ◽  
X. L. Jin ◽  
Y. Peng ◽  
J. Luo ◽  
...  
Keyword(s):  
Capacitance Characteristics

Anomalous capacitance characteristics of TFTs with LDD structures in the saturation region

2016 ◽  
Vol 31 (5) ◽  
pp. 055015
Author(s):  
Miryeon Kim ◽  
Wookyung Sun ◽  
Minho Shin ◽  
Kiwoo Kim ◽  
Jongseuk Kang ◽  
...  
Keyword(s):  
Saturation Region ◽  
Capacitance Characteristics

Development of Electric Power Control using the Capacitance Characteristics of the Fuel Cell

2011 ◽  
Vol 4 (1) ◽  
pp. 1879-1887 ◽  
Author(s):  
Hiroyuki Imanishi ◽  
Kota Manabe ◽  
Tomoya Ogawa ◽  
Yasuhiro Nonobe
Keyword(s):  
Fuel Cell ◽  
Power Control ◽  
Electric Power ◽  
Capacitance Characteristics

Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

2011 ◽  
Vol 383-390 ◽  
pp. 7613-7618
Author(s):  
Y. Yang ◽  
F. Yu ◽  
Ping Han ◽  
R.P. Ge ◽  
L. Yu
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Alloy Films ◽  
Capacitance Voltage ◽  
Capacitance Characteristics ◽  
Contact Barrier

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

Salient Features in the Capacitance Characteristics of Ultrathin High-K Devices

2019 ◽  
Vol 1 (5) ◽  
pp. 745-756
Author(s):  
S. Kar ◽  
Dharmendar Reddy ◽  
Surendra Rawat
Keyword(s):  
High K ◽  
Capacitance Characteristics ◽  
Salient Features

Capacitance characteristics of carbon-based electrochemical capacitors exposed to heteropolytungstic acid electrolyte

2018 ◽  
Vol 282 ◽  
pp. 533-543 ◽  
Author(s):  
Magdalena Skunik-Nuckowska ◽  
Sławomir Dyjak ◽  
Katarzyna Grzejszczyk ◽  
Natalia H. Wisińska ◽  
François Béguin ◽  
...  
Keyword(s):  
Electrochemical Capacitors ◽  
Acid Electrolyte ◽  
Capacitance Characteristics ◽  
Carbon Based
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