Impact of Quantum Capacitance on Intrinsic Inversion Capacitance Characteristics and Inversion-Charge Loss for Multigate III–V-on-Insulator nMOSFETs

2016 ◽  
Vol 63 (1) ◽  
pp. 339-344 ◽  
Author(s):  
Hsin-Hung Shen ◽  
Shih-Lun Shen ◽  
Chang-Hung Yu ◽  
Pin Su
Keyword(s):  
Quantum Capacitance ◽  
Charge Loss ◽  
Inversion Charge ◽  
Capacitance Characteristics ◽  
And Inversion

CMOS multiplier based on the relationship between drain current and inversion charge

2009 ◽  
Vol 3 (5) ◽  
pp. 239-247 ◽  
Author(s):  
M.B. Machado ◽  
C. Galup-Montoro ◽  
A.I.A. Cunha ◽  
M.C. Schneider ◽  
L.A. de Lacerda
Keyword(s):  
Drain Current ◽  
Inversion Charge ◽  
And Inversion ◽  
The Relationship

Bias-Temperature-Stress Induced Mobility Improvement in 4H-SiC MOSFETs

1999 ◽  
Vol 572 ◽  
Author(s):  
K. Chattyt ◽  
T. P. Chowt ◽  
R. J. Gutmannt ◽  
E. Arnoldi ◽  
D. Alok
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
High Mobility ◽  
Gate Bias ◽  
Field Effect Mobility ◽  
Charge Densities ◽  
Unstressed State ◽  
Inversion Charge ◽  
Bias Temperature Stress ◽  
And Inversion

ABSTRACTIn this work, we report on an instability which affects the field effect mobility in 4HSiC MOSFETs. The devices (MOSFETs and capacitors) were subjected to a biastemperature stress (BTS) for 30 minutes at 150°C at stress voltages corresponding to oxide fields upto 1MV/cm. Following a positive BTS(i.e. gate voltage positive), the field effect mobility increased by upto two orders of magnitude from the original value; upon application of a negative BTS to the MOSFET, the device characteristics degraded to the unstressed state. The high mobility state could be recovered by a positive BTS and was reversible with repeated bias stressing. An explanation of this phenomenon is proposed based on the effect of interfacial ions on the dependence of both trapped charge and inversion charge densities on gate bias.

The Fine Structure of the Sheath of Volvox Carteri f. Weismannia

1977 ◽  
Vol 35 ◽  
pp. 346-347
Author(s):  
Regina Birchem
Keyword(s):  
Developmental Stages ◽  
Ruthenium Red ◽  
Sulfated Polysaccharides ◽  
Volvox Carteri ◽  
High Voltage Electron Microscopy ◽  
Ultrastructural Studies ◽  
Voltage Electron ◽  
Sheath Formation ◽  
And Inversion ◽  
Sheath Material

Spheroids of the green colonial alga Volvox consist of biflagellate Chlamydomonad-like cells embedded in a transparent sheath. The sheath, important as a substance through which metabolic materials, light, and the sexual inducer must pass to and from the cells, has been shown to have an ordered structure (1,2). It is composed of both protein and carbohydrate (3); studies of V. rousseletii indicate an outside layer of sulfated polysaccharides (4).Ultrastructural studies of the sheath material in developmental stages of V. carteri f. weismannia were undertaken employing variations in the standard fixation procedure, ruthenium red, diaminobenzidine, and high voltage electron microscopy. Sheath formation begins after the completion of cell division and inversion of the daughter spheroids. Golgi, rough ER, and plasma membrane are actively involved in phases of sheath synthesis (Fig. 1). Six layers of ultrastructurally differentiated sheath material have been identified.

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