Mechanisms of the formation of morphological features of micropipes in bulk crystals of silicon carbide

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

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Dislocation Content of Etch Pits in Hexagonal Silicon Carbide

MRS Proceedings ◽

10.1557/proc-640-h5.4 ◽

2000 ◽

Vol 640 ◽

Author(s):

Igor I. Khlebnikov ◽

Mohsen B. Lari ◽

Yuri I. Khlebnikov ◽

Robert T. Bondokov ◽

Ramakrishna Ayyagari ◽

...

Keyword(s):

Silicon Carbide ◽

Crystal Growth ◽

Growth Process ◽

Linear Array ◽

Strong Relationship ◽

Morphological Features ◽

Physical Basis ◽

Etch Pits ◽

Etch Pit ◽

Crystal Growth Process

ABSTRACT6H- and 4H- SiC crystals grown on the Si-face were chemically etched on the as-grown (virgin) surface and the C-face (sliced side). The etching of both the surfaces revealed a strong relationship between a variety of etch pits and the morphological features of the grown boule surface. Several types of etched patterns were revealed. On the Si face, we observed small, medium, and large hexagonal shaped pits and a linear array of small etch pits. However, the C face contained only small pits and a linear array of small pits.We observed individual or group of dislocations that were connected from the Si face to the opposite C face of the wafer. Also, etch pit lines oriented along specific crystallographic directions were seen.Our experimental observations have provided a physical basis to explain the generation of defects in SiC. An analysis of our observations show that a correlation exists between the distribution of different size etch pits and the condition of the crystal growth process.

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Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

MRS Proceedings ◽

10.1557/proc-423-215 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 11

Author(s):

R. Eckstein ◽

D. Hofmann ◽

Y. Makarov ◽

St. G. Müller ◽

G. Pensl ◽

...

Keyword(s):

Mass Transfer ◽

Silicon Carbide ◽

Optical Properties ◽

Growth Process ◽

Numerical Models ◽

Chemical Processes ◽

Bulk Crystals ◽

Electrical And Optical Properties ◽

Bulk Growth ◽

Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

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