Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Growth and Characterization of 2″ 6H-Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
Erwin Schmitt ◽  
Robert Eckstein ◽  
Martin Kölbl ◽  
Amd-Dietrich Weber
Keyword(s):  
Silicon Carbide ◽  
Boundary Conditions ◽  
Growth Process ◽  
Defect Density ◽  
Crystal Quality ◽  
Process Conditions ◽  
Thermal Boundary Conditions ◽  
Sublimation Growth ◽  
Defect Densities

ABSTRACTFor the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

Heat and mass transfer simulation of SiC boule growth by sublimation

2000 ◽  
Vol 640 ◽  
Author(s):  
Michel Pons ◽  
Cecile Moulin ◽  
Jean-Marc Dedulle ◽  
Alexandre Pisch ◽  
Bernard Pelissier ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Mass Transfer ◽  
Temperature Field ◽  
Growth Process ◽  
Radiative Heat ◽  
Species Transport ◽  
Density Of Dislocations ◽  
Heterogeneous Reactivity ◽  
Mechanical Approach ◽  
Sublimation Growth

ABSTRACTAn accurate modelling and simulation of the sublimation growth process needs a software taking into account a multitude of highly coupled phenomena: fluid mechanics, convective, conductive and radiative heat transfer, electromagnetic, multicomponent species transport, homogeneous and heterogeneous reactivity and finally thermal and transport databases. The objective of this paper is to combine modelling trends with experimental results to propose explanations and solutions to growth problems. Finally, a simple and generic mechanical approach will show the relations between the density of dislocations and the temperature field.

Germanium Incorporation during PVT Bulk Growth of Silicon Carbide

2009 ◽  
Vol 615-617 ◽  
pp. 11-14 ◽  
Author(s):  
Philip Hens ◽  
Ulrike Künecke ◽  
Katja Konias ◽  
Rainer Hock ◽  
Peter J. Wellmann
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Structural Properties ◽  
Periodic Table ◽  
Electronic Devices ◽  
Structural Quality ◽  
Bulk Growth ◽  
Sublimation Growth ◽  
Germanium Concentration

Silicon carbide as a material for electronic devices still has substantial problems concerning its structural quality and defects. It has been shown that dopants can have a big influence on structural properties like polytype stability and dislocation statistics [1]. We will discuss the effect of an isoelectronic dopant in silicon carbide. Germanium, being a member of the 4th group in the periodic table of elements like silicon and carbon, will not influence the electrical properties of the material such as e.g. aluminum. In our experiments we reached concentrations of up to 1*1020 cm-3. We have observed an impact on the polytype stability during sublimation growth with in-situ germanium incorporation. We investigated an influence on the dislocation statistics during growth and, hence, varying germanium concentration. We found only a slight decrease in mobility during Hall measurements but no severe changes in electrical properties of the material.

Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
Noboru Ohtani ◽  
Jun Takahashi ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
Masatoshi Kanaya
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Defect Formation ◽  
Stacking Faults ◽  
Growth Direction ◽  
Bulk Crystal ◽  
Structural Defects ◽  
Bulk Crystals ◽  
Bulk Crystal Growth ◽  
Sublimation Growth

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT

2014 ◽  
Vol 778-780 ◽  
pp. 31-34 ◽  
Author(s):  
Kanaparin Ariyawong ◽  
Nikolaos Tsavdaris ◽  
Jean Marc Dedulle ◽  
Eirini Sarigiannidou ◽  
Thierry Ouisse ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carbon Source ◽  
Single Crystal ◽  
Growth Process ◽  
Graphite Crucible ◽  
Vapor Species ◽  
Sublimation Growth ◽  
Graphite Part ◽  
Additional Carbon Source ◽  
Good Agreement

Graphite crucible in seeded sublimation growth of Silicon Carbide (SiC) single crystal does not only act as a container but also as an additional carbon source. The modeling of the growth process integrated with the etching phenomenon caused by the interaction between vapor species and the graphite crucible is shown to be able to predict the shape of the crystal front during the growth. The additional fluxes produced at the graphite part are delivered to the growing crystal mainly at the crystal periphery. The results obtained from the modeling are in good agreement with the experimental ones.

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