Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation

1999 ◽  
Vol 198-199 ◽  
pp. 1005-1010 ◽  
Author(s):  
D Hofmann ◽  
M Bickermann ◽  
R Eckstein ◽  
M Kölbl ◽  
St.G Müller ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Defect Formation ◽  
Theoretical Studies ◽  
Bulk Crystals ◽  
Sublimation Growth ◽  
Experimental And Theoretical Studies

Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
Noboru Ohtani ◽  
Jun Takahashi ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
Masatoshi Kanaya
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Defect Formation ◽  
Stacking Faults ◽  
Growth Direction ◽  
Bulk Crystal ◽  
Structural Defects ◽  
Bulk Crystals ◽  
Bulk Crystal Growth ◽  
Sublimation Growth

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

scholarly journals Macrodefects in Cubic Silicon Carbide Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 375-378 ◽  
Author(s):  
Valdas Jokubavicius ◽  
Justinas Palisaitis ◽  
Remigijus Vasiliauskas ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Temperature Gradient ◽  
Early Stage ◽  
Growth Conditions ◽  
Temperature Ramp ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Investigation of silicon carbide physical vapor transport growth on the C-terminated face of 6H seeds

2000 ◽  
Vol 640 ◽  
Author(s):  
D. Schulz ◽  
J. Doerschel ◽  
K. Irmscher ◽  
H.-J. Rost ◽  
D. Siche ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Step Bunching ◽  
Sublimation Growth

ABSTRACTSublimation growth of 6H-SiC has been studied with respect to surface morphology, growth temperature, supersaturation and growth rate. Growth was performed on the C-terminated face of 6H seeds mainly and for comparison also the Si-terminated face was used. Step bunching is observed dependent on different parameters and is strongly influenced by the seed orientation. The growth rate of 4H on the C-face is found to be higher than the rate of 6H grown on the Siface.

scholarly journals R-Curve Response Of Silicon Carbide Whisker-Reinforced Alumina: Microstructural Influence

1995 ◽  
Vol 409 ◽  
Author(s):  
E. Y. Sun ◽  
C. H. Hsueh ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
Fracture Resistance ◽  
Crack Extension ◽  
Theoretical Studies ◽  
Mechanical Reliability ◽  
Toughening Mechanisms ◽  
Silicon Carbide Whisker ◽  
Direct Observations ◽  
Crack Interactions ◽  
Experimental And Theoretical Studies

AbstractRising fracture resistance with crack extension (R-curve response) can lead to improvements in the mechanical reliability of ceramics. To understand how microstructures influence the R-curve behavior, direct observations of crack interactions with microstructural features were conducted on SiC whisker-reinforced alumina. The contribution of the dominant toughening mechanisms to the R-curve behavior of these composites is discussed using experimental and theoretical studies.

The Stabilizing Effect of Pre-Equilibria: A Trifluoromethyl Complex as CF2 Reservoir in Catalytic Olefin Difluorocarbenation

2020 ◽  
Author(s):  
Thomas Louis-Goff ◽  
Huu Vinh Trinh ◽  
Eileen Chen ◽  
Arnold L. Rheingold ◽  
Christian Ehm ◽  
...  
Keyword(s):  
High Selectivity ◽  
Side Reactions ◽  
Theoretical Studies ◽  
Attractive Feature ◽  
Catalyst Recovery ◽  
Wide Range ◽  
Stabilizing Effect ◽  
Experimental And Theoretical Studies

A new, efficient, catalytic difluorocarbenation of olefins to give 1,1-difluorocyclopropanes is presented. The catalyst, an organobismuth complex, uses TMSCF<sub>3</sub> as a stoichiometric difluorocarbene source. We demonstrate both the viability and robustness of this reaction over a wide range of alkenes and alkynes, including electron-poor alkenes, to generate the corresponding 1,1-difluorocyclopropanes and 1,1-difluorocyclopropenes. Ease of catalyst recovery from the reaction mixture is another attractive feature of this method. In depth experimental and theoretical studies showed that the key difluorocarbene-generating step proceeds through a bismuth non-redox synchronous mechanism generating a highly reactive free CF<sub>2</sub> in an endergonic pre-equilibrium. It is the reversibility when generating the difluorocarbene that accounts for the high selectivity, while minimizing CF<sub>2</sub>-recombination side-reactions.

Relation of Heat Transfer with the Growth Rate of InSb based Bulk Crystals Grown by VDS and its Effect on the Crystal Quality

2020 ◽  
Vol 12 (2) ◽  
pp. 02012-1-02012-5
Author(s):  
Dilip Maske ◽  
◽  
Manisha Deshpande ◽  
Dattatray Gadkari ◽  
◽  
...  
Keyword(s):  
Heat Transfer ◽  
Growth Rate ◽  
Crystal Quality ◽  
Bulk Crystals
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