Properties of erbium luminescence in bulk crystals of silicon carbide

2000 ◽  
Vol 42 (5) ◽  
pp. 829-835 ◽  
Author(s):  
R. A. Babunts ◽  
V. A. Vetrov ◽  
I. V. Il’in ◽  
E. N. Mokhov ◽  
N. G. Romanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Bulk Crystals

Growth of silicon carbide bulk crystals by the sublimation sandwich method

1997 ◽  
Vol 46 (1-3) ◽  
pp. 317-323 ◽  
Author(s):  
E.N. Mokhov ◽  
M.G. Ramm ◽  
A.D. Roenkov ◽  
Yu.A. Vodakov
Keyword(s):  
Silicon Carbide ◽  
Bulk Crystals ◽  
Sandwich Method

Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
Noboru Ohtani ◽  
Jun Takahashi ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
Masatoshi Kanaya
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Defect Formation ◽  
Stacking Faults ◽  
Growth Direction ◽  
Bulk Crystal ◽  
Structural Defects ◽  
Bulk Crystals ◽  
Bulk Crystal Growth ◽  
Sublimation Growth

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Mechanisms of the formation of morphological features of micropipes in bulk crystals of silicon carbide

2015 ◽  
Vol 57 (4) ◽  
pp. 752-759 ◽  
Author(s):  
T. S. Argunova ◽  
M. Yu. Gutkin ◽  
V. G. Kohn ◽  
E. N. Mokhov
Keyword(s):  
Silicon Carbide ◽  
Morphological Features ◽  
Bulk Crystals

Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals

2000 ◽  
Vol 338-342 ◽  
pp. 445-448 ◽  
Author(s):  
Dieter Hofmann ◽  
Matthias Bickermann ◽  
Wolfgang Hartung ◽  
Albrecht Winnacker
Keyword(s):  
Silicon Carbide ◽  
Bulk Crystals

Growth of Silicon Carbide Bulk Crystals with a Modified Physical Vapor Transport Technique

2006 ◽  
Vol 12 (8-9) ◽  
pp. 557-561 ◽  
Author(s):  
R. Müller ◽  
U. Künecke ◽  
D. Queren ◽  
S. A. Sakwe ◽  
P. Wellmann
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Bulk Crystals ◽  
Transport Technique

scholarly journals STUDY OF THE POSSIBILITY OF POLYTYPE 3C SILICON CARBIDE BULK CRYSTALS GROWING FOR USE IN POWER DEVICES

2014 ◽  
Vol 11 (10) ◽  
pp. 1875-1880
Author(s):  
Lebedev Alexander Alexandrovich ◽  
Bulat Pavel Viktorovich
Keyword(s):  
Silicon Carbide ◽  
Bulk Crystals ◽  
Power Devices

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

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