Growth of silicon carbide bulk crystals by the sublimation sandwich method

AlN bulk crystals were grown by the sublimation “sandwich method” on the SiC substrates. Two types of containers were used: (i) Ta container with a surface layer of TaC created by the special annealing in contact with carbon, (ii) TaC container created by pressing of TaC powder. Cryptocrystalline AlN wafers grown by oversublimation of the original industrial high purity AlN powder were used as a vapor source. So a considerable decrease of oxygen concentration in the source (10 – 30 times) was achieved. 4H and 6H SiC bulk crystals grown by Nitride Crystals, Ltd., which were used as wafers, were crack-free, micropipe-free and have a low dislocation density (1- 4.103cm-2). The method allowed to grow thick AlN bulk crystals up to 5mm height and up to two inches in diameter with smooth mirror-like surface. X-ray diffractometry and topography of the grown AlN layers show that FWHMs of the rocking curves in ω-scan lie in the range of 60-120 arcsec.

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Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

MRS Proceedings ◽

10.1557/proc-510-37 ◽

1998 ◽

Vol 510 ◽

Cited By ~ 10

Author(s):

Noboru Ohtani ◽

Jun Takahashi ◽

Masakazu Katsuno ◽

Hirokatsu Yashiro ◽

Masatoshi Kanaya

Keyword(s):

Silicon Carbide ◽

Crystal Growth ◽

Defect Formation ◽

Stacking Faults ◽

Growth Direction ◽

Bulk Crystal ◽

Structural Defects ◽

Bulk Crystals ◽

Bulk Crystal Growth ◽

Sublimation Growth

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

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Analysis of silicon carbide growth by sublimation sandwich method

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00969-4 ◽

1997 ◽

Vol 173 (3-4) ◽

pp. 408-416 ◽

Cited By ~ 19

Author(s):

S.Yu. Karpov ◽

Yu.N. Makarov ◽

E.N. Mokhov ◽

M.G. Ramm ◽

M.S. Ramm ◽

...

Keyword(s):

Silicon Carbide ◽

Sandwich Method

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Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

MRS Proceedings ◽

10.1557/proc-423-215 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 11

Author(s):

R. Eckstein ◽

D. Hofmann ◽

Y. Makarov ◽

St. G. Müller ◽

G. Pensl ◽

...

Keyword(s):

Mass Transfer ◽

Silicon Carbide ◽

Optical Properties ◽

Growth Process ◽

Numerical Models ◽

Chemical Processes ◽

Bulk Crystals ◽

Electrical And Optical Properties ◽

Bulk Growth ◽

Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

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Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)01212-3 ◽

1999 ◽

Vol 198-199 ◽

pp. 1005-1010 ◽

Cited By ~ 62

Author(s):

D Hofmann ◽

M Bickermann ◽

R Eckstein ◽

M Kölbl ◽

St.G Müller ◽

...

Keyword(s):

Growth Rate ◽

Silicon Carbide ◽

Defect Formation ◽

Theoretical Studies ◽

Bulk Crystals ◽

Sublimation Growth ◽

Experimental And Theoretical Studies

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Sublimation Growth of AlN and GaN Bulk Crystals on SiC Seeds

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.81 ◽

2013 ◽

Vol 740-742 ◽

pp. 81-84 ◽

Cited By ~ 2

Author(s):

E.N. Mokhov ◽

A.A. Wolfson ◽

H. Helava ◽

Yu. Makarov

Keyword(s):

Semiconductor Devices ◽

Crystal Quality ◽

Bulk Crystals ◽

High Quality ◽

Temperature Range ◽

Sandwich Method ◽

Kinetic Mechanisms ◽

Sublimation Growth

Growth techniques of high quality AlN and GaN bulk crystals on SiC seeds by sublimation sandwich method are presented. GaN crystals were grown in the temperature range of 1100-1250 °C and with addition of ammonia (NH3) to prevent GaN decomposition. GaN powder or metallic Ga was used as the source. AlN crystals up to 2 inch diameter have been grown on SiC seeds in the temperature range of 1950 -2050 0С. Kinetic mechanisms and transport features in the sandwich cell are discussed. The achieved high crystal quality has allowed producing semiconductor devices on their basis, in particular, ultraviolet LEDs

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