Metal–Insulator Phase Transition in Tungsten-Doped Vanadium Dioxide Thin Films

2019 ◽  
Vol 61 (8) ◽  
pp. 1471-1474 ◽  
Author(s):  
V. N. Andreev ◽  
V. A. Klimov
2015 ◽  
Vol 3 (26) ◽  
pp. 6771-6777 ◽  
Author(s):  
Ning Wang ◽  
Shiyu Liu ◽  
X. T. Zeng ◽  
Shlomo Magdassi ◽  
Yi Long

Mg2+ and W6+ cations were first codoped into the VO2 lattice, resulting in a widened photon band gap and h+/e− charge carrier accumulation. These effects enhanced the thermochromic performance with a high visible transmission (∼80%) and a low phase transition temperature (∼30 °C).


2003 ◽  
Vol 785 ◽  
Author(s):  
Lijun Jiang ◽  
William N. Carr

ABSTRACTVanadium dioxide (VO2) thin films were fabricated by e-beam evaporation of vanadium thin films followed by thermal oxidation in oxygen ambient. The properties of the VO2 films were investigated for thermo-optical switching applications. Synthesized VO2 film displays a phase transition at 65 – 68 °C. It exhibits an abrupt change in optical reflectivity over the phase transition temperature range. Results for VO2 on a highly reflective metal layer are strongly dependent on the VO2 thickness. The optical switching has a major hysteresis of about 15 °C between the heating and cooling branches. The evolution of the surface morphology with the oxidation time was studied with a SEM. The VO2 film was patterned on microplatforms by metal lift-off technique. We conclude that the evaporation followed by oxidation is an effective method to produce active VO2 film for thermo-optical switching devices.


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