Composition inhomogeneity and structural defects in Czochralski grown Ge x Si1 − x solid solution crystals

2007 ◽  
Vol 33 (6) ◽  
pp. 512-516 ◽  
Author(s):  
L. M. Sorokin ◽  
T. S. Argunova ◽  
N. V. Abrosimov ◽  
M. Yu. Gutkin ◽  
A. G. Zabrodskiĭ ◽  
...  
Keyword(s):  
Solid Solution ◽  
Structural Defects ◽  
Composition Inhomogeneity

scholarly journals Study of electrokinetic and magnetic properties of ZrNi1-xRhxSn semiconductive solid solution

2018 ◽  
Vol 19 (1) ◽  
pp. 21-28
Author(s):  
L.P. Romaka ◽  
Yu.V. Stadnyk ◽  
V.A. Romaka ◽  
A.M. Horyn ◽  
V.Ya. Krayovskyy
Keyword(s):  
Solid Solution ◽  
Magnetic Properties ◽  
Energy State ◽  
Charge Carriers ◽  
Structural Defects ◽  
Magnetic Characteristics ◽  
Main Charge ◽  
Deep Donor ◽  
Thermopower Coefficient ◽  
Donor Acceptor

The features of electrokinetic, energy state and magnetic characteristics of ZrNi1-xRhxSn semiconductive solid solution were investigated in the ranges: T = 80-400 K, x = 0-0.10. It was shown that substitution of Ni atoms (3d84s2) by Rh atoms (4d85s1) in the structure of ZrNiSn compound generated the structural defects with acceptor nature, and holes became the main charge carriers in the ZrNi1-xRhxSn at low temperature. Based on analysis of the motion rate of the Fermi level ΔεF/Δх in ZrNi1-xRhxSn to the valence band and change of sign of thermopower coefficient from positive to negative it was suggested that the structural defects of acceptor and donor natures were generated simultaneously (donor-acceptor pairs), and deep donor band ɛD2 was formed.

scholarly journals Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics

2015 ◽  
Vol 16 (1) ◽  
pp. 111-115
Author(s):  
V. А. Romaka ◽  
P. Rogl ◽  
Yu. V. Stadnyk ◽  
L. P. Romaka ◽  
R. O. Korzh ◽  
...  
Keyword(s):  
Solid Solution ◽  
Structural Defects ◽  
Unknown Mechanism ◽  
Semiconductor Solid Solution

The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті  ≈ 9.5·1019–3.6·1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed.

scholarly journals Synthesis, Structural, Electrical Transport and Energetic Characteristics of ZrNi1-хVxSn Solid Solution

2019 ◽  
Vol 20 (3) ◽  
pp. 275-281
Author(s):  
L. Romaka ◽  
Yu. Stadnyk ◽  
V.A. Romaka ◽  
A. Нoryn ◽  
I. Romaniv ◽  
...  
Keyword(s):  
Solid Solution ◽  
Fermi Level ◽  
Electrical Transport ◽  
Energy State ◽  
Structure Type ◽  
Structural Defects ◽  
Simultaneous Generation ◽  
Heusler Phase ◽  
Arc Melting ◽  
Donor And Acceptor

The samples of ZrNi1-хVxSn solid solution (x = 0 – 0.10) based on the ZrNiSn half-Heusler phase (MgAgAs structure type) were synthesized by direct arc-melting with homogenous annealing at 1073 K. The electrokinetic and energy state characteristics of the ZrNi1-хVxSn semiconducting solid solution were investigated in the temperature range T = 80 - 400 K. An analysis of behavior of the electrokinetic and energetic characteristics, in particular, the motion rate of the Fermi level, ΔεF/Δx for ZrNi1-хVxSn, allows to assume about the simultaneous generation of the structural defects of donor and acceptor nature in the crystal. The additional researches are required to establish the mechanisms of donor generation.

Analysis of co-deposited Ti-Hf thin film on (0001)6H-SiC by HREM, energy-selected and hollow-cone images

1994 ◽  
Vol 52 ◽  
pp. 978-979
Author(s):  
J. S. Bow
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Lattice Parameter ◽  
Dark Field ◽  
Electron Beam Evaporation ◽  
Structural Defects ◽  
Misfit Dislocations ◽  
Hollow Cone ◽  
Chemical Homogeneity ◽  
Dark Field Imaging

Solid solution binary alloys are attractive for defect-free thin film semiconductor contacts because lattice matching can be obtained by composition adjustment, but chemical homogeneity is required. Highly composition sensitive energy-selected and hollow cone (HC) dark field imaging were evaluated for heterogeneity detection in Ti-Hf films using an Ω filter/Zeiss 912 TEM. Conventional HREM, which relatively insensitive to spatial composition variations in this case, was used to observe structural defects in the films near the interfaces.Thin films of pure Ti deposited via UHV electron beam evaporation at room temperature on n-type, vicinal (0001) 6H-SiC showed good epitaxy. This contact displayed rectifying characteristics. The interface was both structurally and chemically sharp. However, misfit dislocations at “stand off” positions were found, due to 4 % mismatch between the basal parameters of Ti and SiC. same column with Ti in the periodic table and has hexagonal crystal structure, but larger lattice parameter (aHf = 3.196 Å, and aTi = 2.950 Å). The Ti-Hf solid solution system obeys Vergard's law well, that is, the lattice parameters of this alloy change linearly with composition.

Proton Intercalation in γ-MnO2 from Ramsdellite to Groutite Through Groutellite

1994 ◽  
Vol 369 ◽  
Author(s):  
Yves Chabre ◽  
Jean Pannetier
Keyword(s):  
Solid Solution ◽  
Reduction Product ◽  
Structural Defects ◽  
Equilibrium Potential ◽  
Two Phase ◽  
Proton Intercalation ◽  
Phase Process

AbstractThis paper presents an investigation of electrochemical proton intercalation in two chemically prepared MDs containing low amounts of structural defects and in a natural MD containing 89%of highly crystalline ramsdellite. XRD examination of equilibrated partly reduced synthetic samples confirms the formation of groutite as a final reduction product and, before mid-reduction, suggests the formation of a solid solution between ramsdellite and groutellite H0.5MnO2. In contrast, electrochemical spectroscopy hint at a two-phase process with an equilibrium potential at –60 m V vs Hg/HgO. The implication of the structural defects on these observations are discussed.

Light scattering by composition inhomogeneity and residual pores in LiAlON solid solution transparent ceramics

2019 ◽  
Vol 45 (16) ◽  
pp. 21029-21033 ◽  
Author(s):  
Yuezhong Wang ◽  
Rongshi Zhang ◽  
Jiahuan He ◽  
Meng Tian ◽  
Tong Zhang ◽  
...  
Keyword(s):  
Solid Solution ◽  
Light Scattering ◽  
Transparent Ceramics ◽  
Composition Inhomogeneity

scholarly journals Features of Structural, Energy and Kinetic Characteristics of Hf1-xErxNiSn Solid Solution

2016 ◽  
Vol 17 (4) ◽  
pp. 552-558
Author(s):  
L.P. Romaka ◽  
P.-F. Rogl ◽  
A.M. Нoryn ◽  
V.V. Romaka ◽  
V.Ya. Krayovskyy ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Solid Solution ◽  
Structural Defects ◽  
Kinetic Characteristics ◽  
Crystallographic Site ◽  
Simultaneous Generation ◽  
Crystal Structural

1-xErxNiSn solid solution in the range: T = 80 – 400 K, x = 0 - 0.10. It was confirmed partly disorder crystal structure of HfNiSn compound as a result of occupation in the 4a crystallographic site of Hf (5d26s2) atoms by Ni (3d84s2) ones up to ~ 1 % that generates in the crystal structural defects of donor nature. It was shown that introduction of Er atoms ordered crystal structure (“healing” of structural defects). It was established mechanisms of simultaneous generation of structural defects as acceptors by substitution of Hf (5d26s2) by Er (4f125d06s2) atoms, and the donor nature defects as a result of the appearance of vacancies in the Sn (4b) atoms sites, which determines the mechanisms of conductivity for Hf1-xErxNiSn.

scholarly journals Features of Structural, Electrokinetic, and Energy State Characteristics of ZrNiSn1-xGax Solid Solution

2017 ◽  
Vol 18 (1) ◽  
pp. 41-48
Author(s):  
L.P. Romaka ◽  
A.M. Нoryn ◽  
Yu.V. Stadnyk ◽  
V.Ya. Krayovskyy ◽  
V.A. Romaka ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Solid Solution ◽  
Energy State ◽  
Impurity Band ◽  
Structural Defects ◽  
Acceptor Impurity ◽  
Acceptor Pair ◽  
Deep Donor ◽  
Temperature Ranges ◽  
Donor Acceptor

Features of structural, electrokinetic, and energy state characteristics of ZrNiSn1-xGax semiconductive solid solution were investigated in the temperature ranges Т = 80 - 400 K and х = 0 - 0.15. Disorder of crystal structure for n-ZrNiSn compound as a result of occupation of Zr (4d25s2) atoms in 4a sites by Ni (3d84s2) ones up to ~ 1 % was confirmed. It generated donor levels band ɛD1 in the band gap. It was shown that introduction of Ga (4s24p1) atoms by means of substitution of Sn (5s25p2) ones ordered crystal structure. In this case acceptor defects were generated in 4b sites and it created extended acceptor impurity band ɛА. It was suggested that with generation of acceptor structural defects the vacancies in the Sn (4b) atomic sites simultaneously generated donor defects and formed deep donor band ɛD2 (donor-acceptor pair took place).

scholarly journals Investigation of structural, thermodynamic and energy state characteristics of the ZrNi1-xRhxSn solid solution

2019 ◽  
Vol 19 (2) ◽  
pp. 151-158
Author(s):  
L.P. Romaka ◽  
Yu.V. Stadnyk ◽  
V.V. Romaka ◽  
P.-F. Rogl ◽  
V.A. Romaka ◽  
...  
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Electronic Structures ◽  
Energy State ◽  
A Priori ◽  
Structural Defects ◽  
Maximum Efficiency ◽  
Deep Donor ◽  
Tetrahedral Voids

The peculiarities of crystal and electronic structures, thermodynamic and energy state characteristics of the ZrNi1-xRhxSn semiconductive solid solution were investigated. It has been shown that in the ZrNiSn compound simultaneously exist two types of structural defects of the donor nature which generate two donor bands with different ionization energy in the band gap: a) the donor band ɛD1, formed as a result of a partial, up to ~ 1%, occupation of 4a position of Zr atoms by Ni atoms (mechanism of “a priori doping”) and deep donor band ɛD2, formed as a result of partial occupation of the tetrahedral voids by Ni atoms (Vac). The substitution in 4c position of the Ni atoms by Rh ones in ZrNi1-xRhxSn generates structural defects of acceptor nature and creates an impurity acceptor band ɛA in the band gap, which, in addition to the existence of ɛD1 та ɛD2 donor bands, makes semiconductor highly doped and strongly compensated. The obtained results allow to understand the mechanisms of electrical conductivity of thermoelectric materials based on n-ZrNiSn and the ways of conscious optimization of their characteristics for obtaining the maximum efficiency of conversion of thermal energy into electric.

scholarly journals Investigation of Electronic Structure of Zr1-xVxNiSn Semiconductive Solid Solution

2019 ◽  
Vol 20 (2) ◽  
pp. 127-132
Author(s):  
Yu.V. Stadnyk ◽  
V.V. Romaka ◽  
V.A. Romaka ◽  
A.M. Нoryn ◽  
L.P. Romaka ◽  
...  
Keyword(s):  
Solid Solution ◽  
Electronic Structure ◽  
Electrical Properties ◽  
Band Gap ◽  
Electronic States ◽  
Structural Defects ◽  
Simultaneous Generation ◽  
Density Of Electronic States ◽  
Donor And Acceptor ◽  
Donor Acceptor

The peculiarities of electronic and crystal structures of Zr1-xVxNiSn (x = 0 - 0.10) semiconductive solid solution were investigated. To predict Fermi level εF behavior, band gap εg and electrokinetic characteristics of Zr1-xVxNiSn, the distribution of density of electronic states (DOS) was calculated. The mechanism of simultaneous generation of structural defects of donor and acceptor nature was determined based on the results of calculations of electronic structure and measurement of electrical properties of Zr1-xVxNiSn semiconductive solid solution. It was established that in the band gap of Zr1-xVxNiSn the energy states of the impurity donor εD2 and acceptor εA1 levels (donor-acceptor pairs) appear, which determine the mechanisms of conduction of semiconductor.

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