scholarly journals Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics

2015 ◽  
Vol 16 (1) ◽  
pp. 111-115
Author(s):  
V. А. Romaka ◽  
P. Rogl ◽  
Yu. V. Stadnyk ◽  
L. P. Romaka ◽  
R. O. Korzh ◽  
...  
Keyword(s):  
Solid Solution ◽  
Structural Defects ◽  
Unknown Mechanism ◽  
Semiconductor Solid Solution

The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті  ≈ 9.5·1019–3.6·1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed.

scholarly journals Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution

2016 ◽  
Vol 17 (2) ◽  
pp. 212-221
Author(s):  
L.P. Romaka ◽  
P.-F. Rogl ◽  
A.M. Нoryn ◽  
V.Ya. Krayovskyy ◽  
Yu.V. Stadnyk ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Solid Solution ◽  
Electronic Structures ◽  
Energy State ◽  
Structural Defects ◽  
Crystallographic Site ◽  
Simultaneous Generation ◽  
Semiconductor Solid Solution ◽  
Crystal Structural

The features of structural, energy state and electrokinetic characteristics were investigated for Hf1‑xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a result of occupation in the 4a crystallographic site of Hf (5d26s2) atoms by Ni (3d84s2) ones up to ~ 1 % that generates in the crystal structural defects of donor nature. It was shown that introduction of Tm atoms ordered crystal structure (“healing” of structural defects). It was established mechanisms of simultaneous generation of structural defects as acceptors by substitution of Hf (5d26s2) by Tm (4f135d06s2) atoms, and the donor nature defects as a result of the appearance of vacancies in the Sn (4b) atoms sites, which determines the mechanisms of conductivity for Hf1-xTmxNiSn.

scholarly journals Investigation of structural, electrokinetic and energy state properties of the semiconductive Zr1-xVxNiSn solid solution

2019 ◽  
Vol 20 (1) ◽  
pp. 33-39
Author(s):  
V. Romaka ◽  
L. Romaka ◽  
Y. Stadnyk ◽  
A. Horyn ◽  
V. Krayovskyy ◽  
...  
Keyword(s):  
Solid Solution ◽  
Structural Change ◽  
Energy State ◽  
Energy Levels ◽  
Lattice Parameter ◽  
Structural Defects ◽  
Simultaneous Generation ◽  
Unknown Mechanism ◽  
Donor And Acceptor ◽  
Donor Acceptor

Structural, electrokinetic and energy state characteristics of the Zr1-xVxNiSn semiconductive solid solution (х=0–0.10) were investigated in the temperature interval 80–400 К. It was shown that doping of the ZrNiSn compound by V atoms (rV=0.134 nm) due to substitution of Zr (rZr=0.160 nm) results in increase of lattice parameter а(х) of Zr1-xVxNiSn indicating unforecast structural change. Based on analysis of the motion rate of the Fermi level ΔεF/Δх for Zr1-xVxNiSn in direction of the conduction band it was concluded about simultaneous generation of the structural defects of the donor and acceptor nature (donor-acceptor pairs) by unknown mechanism and creation of the corresponding energy levels in the band gap of the semiconductor.

scholarly journals Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

2020 ◽  
Vol 6 (9) ◽  
pp. 10-17
Author(s):  
A. Razzakov ◽  
A. Matnazarov ◽  
M. Latipova ◽  
A. Japakov
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Growth Direction ◽  
Si Substrates ◽  
Growth Modes ◽  
Physico Chemical ◽  
Technological Growth ◽  
Crystal Films ◽  
Semiconductor Solid Solution ◽  
Film Interface

Abstract. Single-crystal films of a graded-gap solid solution Si1-xGex (0 <x <1) was grown on Si substrates from limited tin, gallium solution-melt. Accordingly, liquid phase epitaxy method was applied in the process. The formation of dislocations, grown under various technological conditions, at the substrate-film interface along the growth direction of the Si1-xGex solid solution was studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are given.

scholarly journals Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications

Small ◽  
2017 ◽  
Vol 13 (45) ◽  
pp. 1701998 ◽  
Author(s):  
Baodan Liu ◽  
Jing Li ◽  
Wenjin Yang ◽  
Xinglai Zhang ◽  
Xin Jiang ◽  
...  
Keyword(s):  
Solid Solution ◽  
Semiconductor Solid Solution

scholarly journals Study of electrokinetic and magnetic properties of ZrNi1-xRhxSn semiconductive solid solution

2018 ◽  
Vol 19 (1) ◽  
pp. 21-28
Author(s):  
L.P. Romaka ◽  
Yu.V. Stadnyk ◽  
V.A. Romaka ◽  
A.M. Horyn ◽  
V.Ya. Krayovskyy
Keyword(s):  
Solid Solution ◽  
Magnetic Properties ◽  
Energy State ◽  
Charge Carriers ◽  
Structural Defects ◽  
Magnetic Characteristics ◽  
Main Charge ◽  
Deep Donor ◽  
Thermopower Coefficient ◽  
Donor Acceptor

The features of electrokinetic, energy state and magnetic characteristics of ZrNi1-xRhxSn semiconductive solid solution were investigated in the ranges: T = 80-400 K, x = 0-0.10. It was shown that substitution of Ni atoms (3d84s2) by Rh atoms (4d85s1) in the structure of ZrNiSn compound generated the structural defects with acceptor nature, and holes became the main charge carriers in the ZrNi1-xRhxSn at low temperature. Based on analysis of the motion rate of the Fermi level ΔεF/Δх in ZrNi1-xRhxSn to the valence band and change of sign of thermopower coefficient from positive to negative it was suggested that the structural defects of acceptor and donor natures were generated simultaneously (donor-acceptor pairs), and deep donor band ɛD2 was formed.

scholarly journals Synthesis, Structural, Electrical Transport and Energetic Characteristics of ZrNi1-хVxSn Solid Solution

2019 ◽  
Vol 20 (3) ◽  
pp. 275-281
Author(s):  
L. Romaka ◽  
Yu. Stadnyk ◽  
V.A. Romaka ◽  
A. Нoryn ◽  
I. Romaniv ◽  
...  
Keyword(s):  
Solid Solution ◽  
Fermi Level ◽  
Electrical Transport ◽  
Energy State ◽  
Structure Type ◽  
Structural Defects ◽  
Simultaneous Generation ◽  
Heusler Phase ◽  
Arc Melting ◽  
Donor And Acceptor

The samples of ZrNi1-хVxSn solid solution (x = 0 – 0.10) based on the ZrNiSn half-Heusler phase (MgAgAs structure type) were synthesized by direct arc-melting with homogenous annealing at 1073 K. The electrokinetic and energy state characteristics of the ZrNi1-хVxSn semiconducting solid solution were investigated in the temperature range T = 80 - 400 K. An analysis of behavior of the electrokinetic and energetic characteristics, in particular, the motion rate of the Fermi level, ΔεF/Δx for ZrNi1-хVxSn, allows to assume about the simultaneous generation of the structural defects of donor and acceptor nature in the crystal. The additional researches are required to establish the mechanisms of donor generation.

Analysis of co-deposited Ti-Hf thin film on (0001)6H-SiC by HREM, energy-selected and hollow-cone images

1994 ◽  
Vol 52 ◽  
pp. 978-979
Author(s):  
J. S. Bow
Keyword(s):  
Thin Film ◽  
Solid Solution ◽  
Lattice Parameter ◽  
Dark Field ◽  
Electron Beam Evaporation ◽  
Structural Defects ◽  
Misfit Dislocations ◽  
Hollow Cone ◽  
Chemical Homogeneity ◽  
Dark Field Imaging

Solid solution binary alloys are attractive for defect-free thin film semiconductor contacts because lattice matching can be obtained by composition adjustment, but chemical homogeneity is required. Highly composition sensitive energy-selected and hollow cone (HC) dark field imaging were evaluated for heterogeneity detection in Ti-Hf films using an Ω filter/Zeiss 912 TEM. Conventional HREM, which relatively insensitive to spatial composition variations in this case, was used to observe structural defects in the films near the interfaces.Thin films of pure Ti deposited via UHV electron beam evaporation at room temperature on n-type, vicinal (0001) 6H-SiC showed good epitaxy. This contact displayed rectifying characteristics. The interface was both structurally and chemically sharp. However, misfit dislocations at “stand off” positions were found, due to 4 % mismatch between the basal parameters of Ti and SiC. same column with Ti in the periodic table and has hexagonal crystal structure, but larger lattice parameter (aHf = 3.196 Å, and aTi = 2.950 Å). The Ti-Hf solid solution system obeys Vergard's law well, that is, the lattice parameters of this alloy change linearly with composition.

Production technology and optical absorption characteristics of CuIn0.95Ga0.05Se2 semiconductor solid solution films

2016 ◽  
Vol 42 (7) ◽  
pp. 715-717 ◽  
Author(s):  
M. A. Aliev ◽  
S. N. Kallaev ◽  
T. M. Gadzhiev ◽  
R. M. Gadzhieva ◽  
A. M. Ismailov ◽  
...  
Keyword(s):  
Solid Solution ◽  
Optical Absorption ◽  
Production Technology ◽  
Semiconductor Solid Solution ◽  
Absorption Characteristics
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