Effective optical excitation and resonant luminescence of erbium ions in the spectral region of eigenmodes of a planar microcavity

2007 ◽  
Vol 33 (11) ◽  
pp. 976-979 ◽  
Author(s):  
A. V. Medvedev ◽  
A. A. Dukin ◽  
A. B. Pevtsov ◽  
C. Sibilia ◽  
N. A. Feoktistov ◽  
...  
1997 ◽  
Vol 22 (0) ◽  
pp. 83-92
Author(s):  
Marinônio Lopes CORNÉLIO

Photoacoustic spectroscopy provides information about both amplitude and phase of the response of a system to an optical excitation process. This paper presents the studies of the phase in the electron transfer process between octaethylporphyn (OEP) and quinone molecules dispersed in a polymeric matrix. It was observed a tendency in the phase behavior to small values only in the spectral region near to 620 nm, while for shorter wavelength did not show any tendency. These measurements suggested that the electron transfer to acceptor occurred with the participation of octaethylporphyn singlet excited state.


2015 ◽  
Vol 16 (2) ◽  
pp. 245-252 ◽  
Author(s):  
A.H. Kevshyn ◽  
V. V. Halyan ◽  
T. A. Semenyuk

In paper the features of energy transformation processes in activated with erbium ions laser materials based on optical transitions in 4f shell of Er3+ ionwere discussed. Methods of excitation of the luminescence in chalcogenide glasses doped with Er3+ ions were described and found how its intensity depends on concentration of the ions. Up-conversion and cross-relaxation play an important role in the transformation of excitations in erbium-doped materials. In cross-relaxation the energy of one center can be nonradiatively transferred to another center or divided between the two centers, while in the up-conversion, however, energy of several centers summed up in one center, bringing it acts as an additional channel of luminescence quenching, or as a way of pumping of the higher energy levels. To improve the efficiency of optical excitation of many laser materials doped with erbium ions the sensitization with ytterbium ions that have intense absorption band in the range of ~0.9-1 µm with "effective" width of about 1000 cm-1 as well a channel of the efficient nonradiative excitation energy transfer to Er3+ ions is widely used. 


Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Alexander Palatnik ◽  
Markas Sudzius ◽  
Stefan Meister ◽  
Karl Leo

Abstract Topological interface states are formed when two photonic crystals with overlapping band gaps are brought into contact. In this work, we show a planar binary structure with such an interface state in the visible spectral region. Furthermore, we incorporate a thin layer of an active organic material into the structure, providing gain under optical excitation. We observe a transition from fluorescence to lasing under sufficiently strong pump energy density. These results are the first realization of a planar topological laser, based on a topological interface state instead of a cavity like most of other laser devices. We show that the topological nature of the resonance leads to a so-called “topological protection”, i.e. stability against layer thickness variations as long as inversion symmetry is preserved: even for large changes in thickness of layers next to the interface, the resonant state remains relatively stable, enabling design flexibility superior to conventional planar microcavity devices.


2007 ◽  
Vol 31 ◽  
pp. 196-198
Author(s):  
Olga A. Shalygina ◽  
Denis M. Zhigunov ◽  
Dmitrii A. Palenov ◽  
Victor Timoshenko ◽  
Pavel K. Kashkarov ◽  
...  

We report on the experimental and theoretical studies of population/depopulation dynamics of excitons in the structures with Si nanocrystals in SiO2 matrix (nc-Si/SiO2) under strong optical excitation. The experimental results are explained using a phenomenological model based on rate equations for coupled system of energy donors (excitons) and energy acceptors (erbium ions). Exciton luminescence is found to exhibit superlinear dependence for Er-doped samples. At the same time the Er-related luminescence at 1.5 μm shows a saturation of the intensity and shortening of the lifetime, which are attributed to the population inversion of the Er ions states. The obtained results demonstrate that nc-Si/SiO2:Er systems can be used for applications in Si-based optical amplifiers and lasers, compatible with planar Si-technology.


2012 ◽  
Vol 111 (9) ◽  
pp. 094314 ◽  
Author(s):  
Nikola Prtljaga ◽  
Daniel Navarro-Urrios ◽  
Alessandro Pitanti ◽  
Federico Ferrarese-Lupi ◽  
Blas Garrido ◽  
...  

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-737-C8-738
Author(s):  
Y. S. Kwon ◽  
S. Kimura ◽  
T. Nanba ◽  
S. Kunii ◽  
M. Ikezawa ◽  
...  

2018 ◽  
Author(s):  
Adrian Cernescu ◽  
Michał Szuwarzyński ◽  
Urszula Kwolek ◽  
Karol Wolski ◽  
Paweł Wydro ◽  
...  

<div><div>Scattering-mode Scanning Near-Field Optical Microscopy (sSNOM) allows one to obtain absorption spectra in the mid-IR region for samples as small as 20 nm in size. This configuration has made it possible to measure FTIR spectra of the protein complement of membranes. (Amenabar 2013) We now show that mid-IR sSNOM has the sensitivity required to measure spectra of phospholipids in individual bilayers in the spectral range 800 cm<sup>-1</sup>–1400 cm<sup>-1</sup>. We have observed the main absorption bands of the dipalmitoylphosphatidylcholine headgroups in this spectral region above noise level. We have also mapped the phosphate absorption band at 1070 cm<sup>-1</sup> simultaneously with the AFM topography. We have shown that we could achieve sufficient contrast to discriminate between single and multiple phospholipid bilayers and other structures, such as liposomes. This work opens the way to further research that uses nano-IR spectroscopy to describe the biochemistry of cell membranes and model systems.</div></div><div></div>


2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.


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